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Works matching AU Shchemerov, I. V.

Results: 3

1

Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate.

Published in:

Technical Physics Letters, 2020, v. 46, n. 3, p. 228, doi. 10.1134/S106378502003013X

By:

Nikolaev, V. I.;
Pechnikov, A. I.;
Guzilova, L. I.;
Chikiryaka, A. V.;
Shcheglov, M. P.;
Nikolaev, V. V.;
Stepanov, S. I.;
Vasil'ev, A. A.;
Shchemerov, I. V.;
Polyakov, A. Ya.

Publication type:

Article

2

The effects of hydrogenation on the properties of heavy ion irradiated β-Ga<sub>2</sub>O<sub>3</sub>.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 15, p. 1, doi. 10.1007/s10854-023-10628-y

By:

Polyakov, A. Y.;
Kuznetsov, A.;
Azarov, A.;
Miakonkikh, A. V.;
Chernykh, A. V.;
Vasilev, A. A.;
Shchemerov, I. V.;
Kochkova, A. I.;
Matros, N. R.;
Pearton, S. J.

Publication type:

Article

3

Electron irradiation of near-UV GaN/InGaN light emitting diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700372

By:

Lee, In‐Hwan;
Polyakov, Alexander Y.;
Smirnov, N. B.;
Shchemerov, I. V.;
Shmidt, N. M.;
Tal'nishnih, N. A.;
Shabunina, E. I.;
Cho, Han‐Su;
Hwang, Sung‐Min;
Zinovyev, R. A.;
Didenko, S. I.;
Lagov, P. B.;
Pearton, S. J.

Publication type:

Article