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Variation of the metal-insulator phase transition temperature in VO<sub>2</sub>: An overview of some possible implementation methods.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 2, p. 136, doi. 10.15407/spqeo27.02.136
By:
- Valakh, M. Ya.;
- Yukhymchuk, V. O.;
- Dzhagan, V. M.;
- Isaieva, O. F.;
- Yefanov, V. S.;
- Romanyuk, B. M.
Publication type:
Article
Nanomechanical properties of polycrystalline vanadium oxide thin films of different phase composition.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 4, p. 388, doi. 10.15407/spqeo26.04.388
By:
- Lytvyn, P. M.;
- Dzhagan, V. M.;
- Valakh, M. Ya.;
- Korchovyi, A. A.;
- Isaieva, O. F.;
- Stadnik, O. A.;
- Kulbachynskyi, O. A.;
- Gudymenko, O. Yo.;
- Romanyuk, B. M.;
- Melnik, V. P.
Publication type:
Article
Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review).
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 278, doi. 10.15407/spqeo26.03.278
By:
- Melnik, V. P.;
- Popov, V. G.;
- Romanyuk, B. M.;
- Antonin, S. V.;
- Evtukh, A. A.
Publication type:
Article
Phase transition in vanadium oxide films formed by multistep deposition.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 362, doi. 10.15407/spqeo24.04.362
By:
- Kladko, V. P.;
- Melnik, V. P.;
- Liubchenko, O. I.;
- Romanyuk, B. M.;
- Gudymenko, O. Yo.;
- Sabov, T. M.;
- Dubikovskyi, O. V.;
- Maksimenko, Z. V.;
- Kosulya, O. V.;
- Kulbachynskyi, O. A.;
- Lytvyn, P. M.;
- Efremov, O. O.
Publication type:
Article
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 153, doi. 10.15407/spqeo20.02.153
By:
- Sabov, T. M.;
- Oberemok, O. S.;
- Dubikovskyi, O. V.;
- Melnik, V. P.;
- Kladko, V. P.;
- Romanyuk, B. M.;
- Popov, V. G.;
- Gudymenko, O. Yo.;
- Safriuk, N. V.
Publication type:
Article
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 153, doi. 10.15407/spqeo20.02.153
By:
- Sabov, T. M.;
- Oberemok, O. S.;
- Dubikovskyi, O. V.;
- Melnik, V. P.;
- Kladko, V. P.;
- Romanyuk, B. M.;
- Popov, V. G.;
- Gudymenko, O. Yo.;
- Safriuk, N. V.
Publication type:
Article

Found: 6

Variation of the metal-insulator phase transition temperature in VO<sub>2</sub>: An overview of some possible implementation methods.

Nanomechanical properties of polycrystalline vanadium oxide thin films of different phase composition.

Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review).

Phase transition in vanadium oxide films formed by multistep deposition.

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient.

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient.