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AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell.
- Published in:
- International Journal of Electronics & Telecommunications, 2014, v. 60, n. 2, p. 151, doi. 10.2478/eletel-2014-0018
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- Article
Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications.
- Published in:
- Optica Applicata, 2016, v. 46, n. 2, p. 241, doi. 10.5277/oa160208
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- Article
Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures.
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- Optica Applicata, 2016, v. 46, n. 2, p. 255, doi. 10.5277/oa160210
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- Article
Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region.
- Published in:
- Optica Applicata, 2007, v. 37, n. 4, p. 415
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- Article
AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region.
- Published in:
- Optica Applicata, 2005, v. 35, n. 3, p. 645
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- Article