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Control of technological parameters in the process of ribbed panel forging: use of measuring equipment and mathematical modeling methods.
Published in:
Measurement Techniques, 2024, v. 66, n. 10, p. 776, doi. 10.1007/s11018-024-02291-4
By:
- Zharov, M. V.;
- Preobrazhenskii, E. V.
Publication type:
Article
Analysis of surface microstructure and quality and properties of aluminum oxide substrates.
Published in:
Glass & Ceramics, 2011, v. 67, n. 9/10, p. 271, doi. 10.1007/s10717-011-9278-z
By:
- Lukin, E.;
- Anufrieva, E.;
- Popova, N.;
- Morozov, B.;
- Preobrazhenskii, V.;
- Bezlepkin, V.;
- Ukhvatova, L.;
- Brzhezinskii, G.
Publication type:
Article
InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates.
Published in:
Russian Physics Journal, 2014, v. 57, n. 3, p. 359, doi. 10.1007/s11182-014-0247-1
By:
- Emel'yanov, Е.;
- Kokhanenko, А.;
- Abramkin, D.;
- Pchelyakov, O.;
- Putyato, М.;
- Semyagin, B.;
- Preobrazhenskii, V.;
- Vasilenko, A.;
- Feklin, D.;
- Niu, Zhicuan;
- Ni, Haiqiao
Publication type:
Article
Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates.
Published in:
Russian Physics Journal, 2013, v. 56, n. 1, p. 55, doi. 10.1007/s11182-013-9994-7
By:
- Emelyanov, E.;
- Kokhanenko, A.;
- Pchelyakov, O.;
- Loshkarev, I.;
- Seleznev, V.;
- Putyato, M.;
- Semyagin, B.;
- Preobrazhenskii, V.;
- Niu, Zhicuan;
- Ni, Haiqiao
Publication type:
Article
Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem A B/Si-solar energy converters on an active silicon substrate.
Published in:
Russian Physics Journal, 2011, v. 53, n. 9, p. 906, doi. 10.1007/s11182-011-9509-3
By:
- Putyato, M. A.;
- Semyagin, B. R.;
- Emel'yanov, E. A.;
- Pakhanov, N. A.;
- Preobrazhenskii, V. V.
Publication type:
Article
Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing.
Published in:
Russian Physics Journal, 2008, v. 51, n. 9, p. 887, doi. 10.1007/s11182-009-9140-8
By:
- Vasev, A. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Seleznev, V. A.;
- Preobrazhenskii, V. V.
Publication type:
Article
Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy.
Published in:
Russian Physics Journal, 2006, v. 49, n. 12, p. 1334, doi. 10.1007/s11182-006-0263-x
By:
- Lavrentieva, L.;
- Vilisova, M.;
- Bobrovnikova, I.;
- Ivonin, I.;
- Preobrazhenskii, V.;
- Chaldyshev, V.
Publication type:
Article
Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers.
Published in:
Acta Crystallographica Section B: Structural Science, Crystal Engineering & Materials, 2013, v. 69, n. 1, p. 30, doi. 10.1107/S2052519213000183
By:
- Baidakova, M. V.;
- Bert, N. A.;
- Chaldyshev, V.V.;
- Nevedomsky, V. N.;
- Yagovkina, M. A.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure.
Published in:
Technical Physics, 2019, v. 64, n. 7, p. 1010, doi. 10.1134/S106378421907020X
By:
- Putyato, M. A.;
- Valisheva, N. A.;
- Petrushkov, M. O.;
- Preobrazhenskii, V. V.;
- Chistokhin, I. B.;
- Semyagin, B. R.;
- Emel'yanov, E. A.;
- Vasev, A. V.;
- Skachkov, A. F.;
- Yurko, G. I.;
- Nesterenko, I. I.
Publication type:
Article
A suite of experimental conditions for photoluminescence monitoring of a heterojunction bipolar transistor structure.
Published in:
Technical Physics, 1997, v. 42, n. 12, p. 1395, doi. 10.1134/1.1258884
By:
- Zhuravlev, K. S.;
- Shamirzaev, T. S.;
- Preobrazhenskiı, V. V.;
- Semyagin, B. R.;
- Kostyuchenko, V. R.
Publication type:
Article
Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 273, doi. 10.1134/S1063782624030151
By:
- Snigirev, L. A.;
- Bert, N. A.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Chaldyshev, V. V.
Publication type:
Article
Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial.
Published in:
Semiconductors, 2023, v. 57, n. 13, p. 615, doi. 10.1134/S1063782623050160
By:
- Snigirev, L. A.;
- Ushanov, V. I.;
- Ivanov, A. A.;
- Bert, N. A.;
- Kirilenko, D. A.;
- Yagovkina, M. A.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. P.;
- Kasatkin, I. A.;
- Chaldyshev, V. V.
Publication type:
Article
Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2023, v. 57, n. 9, p. 405, doi. 10.1134/S1063782623060155
By:
- Semyagin, B. R.;
- Kolesnikov, A. V.;
- Putyato, M. A.;
- Preobrazhenskii, V. V.;
- Popova, T. B.;
- Ushanov, V. I.;
- Chaldyshev, V. V.
Publication type:
Article
Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth.
Published in:
Semiconductors, 2020, v. 54, n. 14, p. 1850, doi. 10.1134/S1063782620140213
By:
- Nastovjak, A. G.;
- Shwartz, N. L.;
- Emelyanov, E. A.;
- Petrushkov, M. O.;
- Vasev, A. V.;
- Putyato, M. A.;
- Preobrazhenskii, V. V.
Publication type:
Article
Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates.
Published in:
Semiconductors, 2020, v. 54, n. 12, p. 1548, doi. 10.1134/S1063782620120295
By:
- Petrushkov, M. O.;
- Abramkin, D. S.;
- Emelyanov, E. A.;
- Putyato, M. A.;
- Vasev, A. V.;
- Loshkarev, D. I.;
- Yesin, M. Yu.;
- Komkov, O. S.;
- Firsov, D. D.;
- Preobrazhenskii, V. V.
Publication type:
Article
Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region.
Published in:
Semiconductors, 2020, v. 54, n. 9, p. 1119, doi. 10.1134/S1063782620090304
By:
- Utochkin, V. V.;
- Fadeev, M. A.;
- Krishtopenko, S. S.;
- Rumyantsev, V. V.;
- Aleshkin, V. Ya.;
- Dubinov, A. A.;
- Morozov, S. V.;
- Semyagin, B. R.;
- Putyato, M. A.;
- Emelyanov, E. A.;
- Preobrazhenskii, V. V.;
- Gavrilenko, V. I.
Publication type:
Article
Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 108, doi. 10.1134/S1063782620010133
By:
- Legan, D. M.;
- Pchelyakov, O. P.;
- Preobrazhenskii, V. V.
Publication type:
Article
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1143, doi. 10.1134/S1063782619090021
By:
- Abramkin, D. S.;
- Petrushkov, M. O.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Emelyanov, E. A.;
- Preobrazhenskii, V. V.;
- Gutakovskii, A. K.;
- Shamirzaev, T. S.
Publication type:
Article
The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 503, doi. 10.1134/S1063782619040092
By:
- Emelyanov, E. A.;
- Vasev, A. V.;
- Semyagin, B. R.;
- Yesin, M. Yu.;
- Loshkarev, I. D.;
- Vasilenko, A. P.;
- Putyato, M. A.;
- Petrushkov, M. O.;
- Preobrazhenskii, V. V.
Publication type:
Article
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1704, doi. 10.1134/S1063782618130213
By:
- Ushanov, V. I.;
- Chaldyshev, V. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing.
Published in:
Semiconductors, 2018, v. 52, n. 5, p. 664, doi. 10.1134/S1063782618050354
By:
- Vasev, A. V.;
- Putyato, M. A.;
- Preobrazhenskii, V. V.;
- Bakarov, A. K.;
- Toropov, A. I.
Publication type:
Article
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells.
Published in:
Semiconductors, 2017, v. 51, n. 1, p. 38, doi. 10.1134/S1063782617010109
By:
- Krishtopenko, S.;
- Ikonnikov, A.;
- Maremyanin, K.;
- Bovkun, L.;
- Spirin, K.;
- Kadykov, A.;
- Marcinkiewicz, M.;
- Ruffenach, S.;
- Consejo, C.;
- Teppe, F.;
- Knap, W.;
- Semyagin, B.;
- Putyato, M.;
- Emelyanov, E.;
- Preobrazhenskii, V.;
- Gavrilenko, V.
Publication type:
Article
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1595, doi. 10.1134/S1063782616120253
By:
- Ushanov, V.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1499, doi. 10.1134/S1063782616110154
By:
- Kosarev, A.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
Plasmon resonance in new AsSb-AlGaAs metal-semiconductor metamaterials.
Published in:
Semiconductors, 2015, v. 49, n. 12, p. 1587, doi. 10.1134/S1063782615120234
By:
- Ushanov, V.;
- Chaldyshev, V.;
- Bert, N.;
- Nevedomsky, V.;
- Il'inskaya, N.;
- Lebedeva, N.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
Effect of the growth temperature on the statistical parameters of GaN surface morphology.
Published in:
Semiconductors, 2014, v. 48, n. 7, p. 872, doi. 10.1134/S1063782614070148
By:
- Novikov, V.;
- Preobrazhenskii, V.;
- Ivonin, I.
Publication type:
Article
Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix.
Published in:
Semiconductors, 2013, v. 47, n. 8, p. 1046, doi. 10.1134/S1063782613080198
By:
- Ushanov, V.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
New system of self-assembled GaSb/GaP quantum dots.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1534, doi. 10.1134/S1063782612120020
By:
- Abramkin, D.;
- Putyato, M.;
- Gutakovskii, A.;
- Semyagin, B.;
- Preobrazhenskii, V.;
- Shamirzaev, T.
Publication type:
Article
Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions.
Published in:
Semiconductors, 2012, v. 46, n. 10, p. 1291, doi. 10.1134/S1063782612100089
By:
- Lukin, P.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
Electron microscopy of GaAs Structures with InAs and as quantum dots.
Published in:
Semiconductors, 2011, v. 45, n. 12, p. 1580, doi. 10.1134/S1063782611120104
By:
- Nevedomskii, V.;
- Bert, N.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process.
Published in:
Semiconductors, 2009, v. 43, n. 12, p. 1617, doi. 10.1134/S1063782609120082
By:
- Nevedomskii, V. N.;
- Bert, N. A.;
- Chaldyshev, V. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs.
Published in:
Semiconductors, 2009, v. 43, n. 10, p. 1387, doi. 10.1134/S1063782609100236
By:
- Bert, N. A.;
- Kolesnikova, A. L.;
- Nevedomsky, V. N.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Romanov, A. E.;
- Seleznev, V. M.;
- Semyagin, B. R.;
- Chaldyshev, V. V.
Publication type:
Article
High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1078, doi. 10.1134/S1063782609080211
By:
- Chaldyshev, V. V.;
- Yagovkina, M. A.;
- Baidakova, M. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells.
Published in:
JETP Letters, 2017, v. 106, n. 11, p. 727, doi. 10.1134/S0021364017230102
By:
- Ruffenach, S.;
- Krishtopenko, S. S.;
- Bovkun, L. S.;
- Ikonnikov, A. V.;
- Marcinkiewicz, M.;
- Consejo, C.;
- Potemski, M.;
- Piot, B.;
- Orlita, M.;
- Semyagin, B. R.;
- Putyato, M. A.;
- Emel’yanov, E. A.;
- Preobrazhenskii, V. V.;
- Knap, W.;
- Gonzalez-Posada, F.;
- Boissier, G.;
- Tournié, E.;
- Teppe, F.;
- Gavrilenko, V. I.
Publication type:
Article
Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor.
Published in:
JETP Letters, 2017, v. 105, n. 8, p. 508, doi. 10.1134/S0021364017080057
By:
- Kononov, A.;
- Egorov, S.;
- Titova, N.;
- Semyagin, B.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Emelyanov, E.;
- Deviatov, E.
Publication type:
Article
Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion.
Published in:
JETP Letters, 2016, v. 104, n. 1, p. 26, doi. 10.1134/S0021364016130014
By:
- Kononov, A.;
- Egorov, S.;
- Kostarev, V.;
- Semyagin, B.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Emelyanov, E.;
- Deviatov, E.
Publication type:
Article
Temperature-scanned magnetic resonance and the evidence of two-way transfer of a nitrogen nuclear spin hyperfine interaction in coupled NV-N pairs in diamond.
Published in:
JETP Letters, 2012, v. 95, n. 8, p. 429, doi. 10.1134/S0021364012080024
By:
- Babunts, R.;
- Soltamova, A.;
- Tolmachev, D.;
- Soltamov, V.;
- Gurin, A.;
- Anisimov, A.;
- Preobrazhenskii, V.;
- Baranovi, P.
Publication type:
Article
Three-phonon coupled excitations in an antiferromagnet.
Published in:
JETP Letters, 2007, v. 86, n. 5, p. 348, doi. 10.1134/S0021364007170158
By:
- Preobrazhenskiĭ, V. L.;
- Rudenko, V. V.;
- Pernod, P.;
- Ozhogin, V. I.
Publication type:
Article
Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 403, doi. 10.1134/S1063782609030270
By:
- Bobrovnikova, I. A.;
- Ivonin, I. V.;
- Novikov, V. A.;
- Preobrazhenskii, V. V.
Publication type:
Article
As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus.
Published in:
Semiconductors, 2009, v. 43, n. 2, p. 266, doi. 10.1134/S1063782609020274
By:
- Boitsov, A.;
- Bert, N.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As–Sb Nanoclusters.
Published in:
Semiconductors, 2005, v. 39, n. 9, p. 1013, doi. 10.1134/1.2042589
By:
- Brunkov, P. N.;
- Gutkin, A. A.;
- Chaldyshev, V. V.;
- Bert, N. N.;
- Konnikov, S. G.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Doping of GaAs Layers with Si under Conditions of Low-Temperature Molecular Beam Epitaxy.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 953, doi. 10.1134/1.1507270
By:
- Vilisova, M. D.;
- Kunitsyn, A. E.;
- Lavrent’eva, L. G.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Toropov, S. E.;
- Chaldyshev, V. V.
Publication type:
Article
Accumulation of Majority Charge Carriers in GaAs Layers Containing Arsenic Nanoclusters.
Published in:
Semiconductors, 2000, v. 34, n. 9, p. 1068, doi. 10.1134/1.1309425
By:
- Brunkov, P. N.;
- Chaldyshev, V. V.;
- Chernigovskiı, A. V.;
- Suvorova, A. A.;
- Bert, N. A.;
- Konnikov, S. G.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Transverse Optical Phonon Splitting in GaAs/AlAs Superlattices Grown on the GaAs(311) Surface Studied by the Method of Raman Light Scattering.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 61, doi. 10.1134/1.1187947
By:
- Volodin, V. A.;
- Efremov, M. D.;
- Preobrazhenskiı, V. V.;
- Semyagin, B. R.;
- Bolotov, V. V.;
- Sachkov, V. A.
Publication type:
Article
Influence of indium doping on the formation of silicon–(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures.
Published in:
Semiconductors, 1999, v. 33, n. 10, p. 1080, doi. 10.1134/1.1187869
By:
- Kunitsyn, A. E.;
- Chaldyshev, V. V.;
- Vul’, S. P.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 824, doi. 10.1134/1.1187790
By:
- Vilisova, M. D.;
- Ivonin, I. V.;
- Lavrentieva, L. G.;
- Subach, S. V.;
- Yakubenya, M. P.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Bert, N. A.;
- Musikhin, Yu. G.;
- Chaldyshev, V. V.
Publication type:
Article
Interaction of surface acoustic waves with a two-dimensional electron gas in the presence of spin splitting of the Landau bands.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 892, doi. 10.1134/1.1187626
By:
- Drichko, I. L.;
- D’yakonov, A. M.;
- Smirnov, I. Yu.;
- Preobrazhenskiı, V. V.;
- Toropov, A. I.
Publication type:
Article
Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy.
Published in:
Semiconductors, 1998, v. 32, n. 10, p. 1036, doi. 10.1134/1.1187561
By:
- Chaldyshev, V. V.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Bert, N. A.;
- Kunitsyn, A. E.;
- Musikhin, Yu. G.;
- Tret’yakov, V. V.;
- Werner, P.
Publication type:
Article
Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters.
Published in:
Semiconductors, 1998, v. 32, n. 10, p. 1044, doi. 10.1134/1.1187563
By:
- Brunkov, P. N.;
- Chaldyshev, V. V.;
- Bert, N. A.;
- Suvorova, A. A.;
- Konnikov, S. G.;
- Chernigovskiı, A. V.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 692, doi. 10.1134/1.1187485
By:
- Chaldyshev, V. V.;
- Kunitsyn, A. E.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Tret'yakov, V. V.;
- Faleev, N. N.
Publication type:
Article

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