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Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs.
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- Semiconductors, 2024, v. 58, n. 3, p. 273, doi. 10.1134/S1063782624030151
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- Article
Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy.
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- Russian Physics Journal, 2006, v. 49, n. 12, p. 1334, doi. 10.1007/s11182-006-0263-x
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- Article
Three-phonon coupled excitations in an antiferromagnet.
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- JETP Letters, 2007, v. 86, n. 5, p. 348, doi. 10.1134/S0021364007170158
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- Article
Detection of Directed Electron–Hole Recombination Energy Transfer from an Ionic Crystal Matrix to Self-Assembled Nanocrystals.
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- JETP Letters, 2005, v. 82, n. 11, p. 727, doi. 10.1134/1.2171728
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- Article
Electron–Hole Recombination Confinement in Self-Organized AgBr Nanocrystals in a Crystalline KBr Matrix.
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- JETP Letters, 2002, v. 76, n. 7, p. 465, doi. 10.1134/1.1528703
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- Article
Focusing of a Nonlinear Phase-Conjugate Ultrasonic Wave Transmitted through a Phase-Inhomogeneous Layer.
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- JETP Letters, 2001, v. 73, n. 8, p. 389, doi. 10.1134/1.1381633
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- Article
Phonon–Plasmon Interaction in Tunneling GaAs/AlAs Superlattices.
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- JETP Letters, 2000, v. 71, n. 11, p. 477, doi. 10.1134/1.1307997
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- Article
Lateral localization of optical phonons in GaAs quantum islands.
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- JETP Letters, 1999, v. 70, n. 2, p. 75, doi. 10.1134/1.568133
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- Article
Erratum: Optical phonons in quantum-wire structures [JETP Lett. 67, No. 2, 120–134 (25 January 1998)].
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- 1998
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- Erratum
Optical phonons in quantum-wire structures.
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- JETP Letters, 1998, v. 67, n. 2, p. 120, doi. 10.1134/1.567690
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- Article
Splitting of transverse optical phonon modes localized in GaAs quantum wires on a faceted (311)A surface.
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- JETP Letters, 1997, v. 66, n. 1, p. 47, doi. 10.1134/1.567481
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- Article
Localized optical vibrational modes in GaSb/AlSb superlattices.
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- JETP Letters, 1996, v. 64, n. 5, p. 393, doi. 10.1134/1.567209
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- Article
Observation of LO-phonon localization in GaAs quantum wires on faceted (311)A surfaces.
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- JETP Letters, 1996, v. 63, n. 12, p. 994, doi. 10.1134/1.567133
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- Publication type:
- Article
Scattering of phase-conjugate ultrasonic waves by microinclusions in a liquid flow.
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- Acoustical Physics, 2016, v. 62, n. 1, p. 58, doi. 10.1134/S1063771015060111
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- Article
Diagnostics and doppler tomography of liquid flows with ultrasonic phase conjugation.
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- Acoustical Physics, 2009, v. 55, n. 4/5, p. 657, doi. 10.1134/S1063771009040228
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- Article
Detection of Moving Objects and Flows in Liquids by Ultrasonic Phase Conjugation.
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- Acoustical Physics, 2005, v. 51, n. 1, p. 105, doi. 10.1134/1.1851635
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- Article
Radiation Power in the Case of the Parametric Phase Conjugation of Ultrasound in a Magnet.
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- Acoustical Physics, 2000, v. 46, n. 6, p. 746, doi. 10.1134/1.1326734
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- Article
Zinc Diffusion into InP via a Narrow Gap from a Planar Zn<sub>3</sub>P<sub>2</sub>-Based Source.
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- Technical Physics Letters, 2018, v. 44, n. 7, p. 612, doi. 10.1134/S1063785018070258
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- Article
Magnetic interaction in the manganite/intermetallic compound heterostructure.
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- Technical Physics Letters, 2016, v. 42, n. 2, p. 113, doi. 10.1134/S1063785016020048
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- Article
Epitaxial InGaAs Quantum Dots in Al<sub>0.29</sub>Ga<sub>0.71</sub>As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles.
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- Optics & Spectroscopy, 2019, v. 126, n. 5, p. 492, doi. 10.1134/S0030400X19050151
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- Article
Magnetostatic surface waves in a ferrite-ferromagnetic metal layered medium based on yttrium iron garnet epitaxial films and TbCo/FeCo nanostructures.
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- Journal of Communications Technology & Electronics, 2015, v. 60, n. 9, p. 999, doi. 10.1134/S1064226915090028
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- Article
GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS:: OPTICAL PROPERTIES ENGINEERING AND APPLICATION.
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- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 315, doi. 10.1142/S0219581X07004857
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- Article
A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure.
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- Technical Physics, 2019, v. 64, n. 7, p. 1010, doi. 10.1134/S106378421907020X
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- Article
A suite of experimental conditions for photoluminescence monitoring of a heterojunction bipolar transistor structure.
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- Technical Physics, 1997, v. 42, n. 12, p. 1395, doi. 10.1134/1.1258884
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- Article
Low-Temperature Molecular Beam Epitaxy of GaAs: Influence of Crystallization Conditions on Structure and Properties of Layers.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S118, doi. 10.1134/1.1529966
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- Article
Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells.
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- JETP Letters, 2017, v. 106, n. 11, p. 727, doi. 10.1134/S0021364017230102
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- Article
Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor.
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- JETP Letters, 2017, v. 105, n. 8, p. 508, doi. 10.1134/S0021364017080057
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- Article
Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion.
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- JETP Letters, 2016, v. 104, n. 1, p. 26, doi. 10.1134/S0021364016130014
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- Article
Temperature-scanned magnetic resonance and the evidence of two-way transfer of a nitrogen nuclear spin hyperfine interaction in coupled NV-N pairs in diamond.
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- JETP Letters, 2012, v. 95, n. 8, p. 429, doi. 10.1134/S0021364012080024
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- Article
Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers.
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- Acta Crystallographica Section B: Structural Science, Crystal Engineering & Materials, 2013, v. 69, n. 1, p. 30, doi. 10.1107/S2052519213000183
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- Article
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells.
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- Semiconductors, 2017, v. 51, n. 1, p. 38, doi. 10.1134/S1063782617010109
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- Article
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs.
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- Semiconductors, 2016, v. 50, n. 12, p. 1595, doi. 10.1134/S1063782616120253
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- Article
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence.
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- Semiconductors, 2016, v. 50, n. 11, p. 1499, doi. 10.1134/S1063782616110154
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- Article
Plasmon resonance in new AsSb-AlGaAs metal-semiconductor metamaterials.
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- Semiconductors, 2015, v. 49, n. 12, p. 1587, doi. 10.1134/S1063782615120234
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- Article
Effect of the growth temperature on the statistical parameters of GaN surface morphology.
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- Semiconductors, 2014, v. 48, n. 7, p. 872, doi. 10.1134/S1063782614070148
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- Article
Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix.
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- Semiconductors, 2013, v. 47, n. 8, p. 1046, doi. 10.1134/S1063782613080198
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- Article
New system of self-assembled GaSb/GaP quantum dots.
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- Semiconductors, 2012, v. 46, n. 12, p. 1534, doi. 10.1134/S1063782612120020
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- Article
Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions.
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- Semiconductors, 2012, v. 46, n. 10, p. 1291, doi. 10.1134/S1063782612100089
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- Article
Electron microscopy of GaAs Structures with InAs and as quantum dots.
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- Semiconductors, 2011, v. 45, n. 12, p. 1580, doi. 10.1134/S1063782611120104
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- Article
GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process.
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- Semiconductors, 2009, v. 43, n. 12, p. 1617, doi. 10.1134/S1063782609120082
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- Article
Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs.
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- Semiconductors, 2009, v. 43, n. 10, p. 1387, doi. 10.1134/S1063782609100236
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- Publication type:
- Article
High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus.
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- Semiconductors, 2009, v. 43, n. 8, p. 1078, doi. 10.1134/S1063782609080211
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- Publication type:
- Article
Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride.
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- Semiconductors, 2009, v. 43, n. 3, p. 403, doi. 10.1134/S1063782609030270
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- Article
As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus.
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- Semiconductors, 2009, v. 43, n. 2, p. 266, doi. 10.1134/S1063782609020274
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- Article
Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As–Sb Nanoclusters.
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- Semiconductors, 2005, v. 39, n. 9, p. 1013, doi. 10.1134/1.2042589
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- Publication type:
- Article
Doping of GaAs Layers with Si under Conditions of Low-Temperature Molecular Beam Epitaxy.
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- Semiconductors, 2002, v. 36, n. 9, p. 953, doi. 10.1134/1.1507270
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- Article
Accumulation of Majority Charge Carriers in GaAs Layers Containing Arsenic Nanoclusters.
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- Semiconductors, 2000, v. 34, n. 9, p. 1068, doi. 10.1134/1.1309425
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- Publication type:
- Article
Transverse Optical Phonon Splitting in GaAs/AlAs Superlattices Grown on the GaAs(311) Surface Studied by the Method of Raman Light Scattering.
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- Semiconductors, 2000, v. 34, n. 1, p. 61, doi. 10.1134/1.1187947
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- Publication type:
- Article
Influence of indium doping on the formation of silicon–(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures.
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- Semiconductors, 1999, v. 33, n. 10, p. 1080, doi. 10.1134/1.1187869
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- Publication type:
- Article
Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy.
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- Semiconductors, 1999, v. 33, n. 8, p. 824, doi. 10.1134/1.1187790
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- Article