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Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions.
Published in:
Semiconductors, 2019, v. 53, n. 2, p. 156, doi. 10.1134/S1063782619020234
By:
- Sobolev, N. A.;
- Kalyadin, A. E.;
- Sakharov, V. I.;
- Serenkov, I. T.;
- Shek, E. I.;
- Parshin, E. O.;
- Melesov, N. S.;
- Simakin, C. G.
Publication type:
Article
Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions.
Published in:
Semiconductors, 2019, v. 53, n. 2, p. 153, doi. 10.1134/S1063782619020222
By:
- Sobolev, N. A.;
- Aleksandrov, O. V.;
- Sakharov, V. I.;
- Serenkov, I. T.;
- Shek, E. I.;
- Kalyadin, A. E.;
- Parshin, E. O.;
- Melesov, N. S.
Publication type:
Article
Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature on Photoluminescence in AlGaN/GaN Superlattices and GaN Epitaxial Layers.
Published in:
Semiconductors, 2005, v. 39, n. 9, p. 1045, doi. 10.1134/1.2042596
By:
- Emel’yanov, A. M.;
- Sobolev, N. A.;
- Shek, E. I.;
- Lundin, V. V.;
- Usikov, A. S.;
- Parshin, E. O.
Publication type:
Article
Low-temperature photoluminescence in holmium-doped silicon.
Published in:
Semiconductors, 1999, v. 33, n. 4, p. 407, doi. 10.1134/1.1187703
By:
- Andreev, B. A.;
- Sobolev, N. A.;
- Nikolaev, Yu. A.;
- Kuritsin, D. I.;
- Makovijchuk, M. I.;
- Parshin, E. O.
Publication type:
Article
Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 μm.
Published in:
Semiconductors, 1999, v. 33, n. 1, p. 1, doi. 10.1134/1.1187636
By:
- Davydov, V. Yu.;
- Lundin, V. V.;
- Smirnov, A. N.;
- Sobolev, N. A.;
- Usikov, A. S.;
- Emel’yanov, A. M.;
- Makoviıchuk, M. I.;
- Parshin, E. O.
Publication type:
Article
Formation of donor centers upon annealing of dysprosium- and holmium-implanted silicon
Published in:
Semiconductors, 1998, v. 32, n. 9, p. 921, doi. 10.1134/1.1187515
By:
- Aleksandrov, O. V.;
- Zakhar'in, A. O.;
- Sobolev, N. A.;
- Shek, E. I.;
- Makoviichuk, M. I.;
- Parshin, E. O.
Publication type:
Article
Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon.
Published in:
Semiconductors, 1997, v. 31, n. 7, p. 738, doi. 10.1134/1.1187081
By:
- Terukov, E. I.;
- Kuznetsov, A. N.;
- Parshin, E. O.;
- Weiser, G.;
- Kuehne, H.
Publication type:
Article
Depth Profiling of Layered Si−O−Al Thin Films with Secondary Ion Mass Spectrometry and Rutherford Backscattering Spectrometry.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2019, v. 13, n. 2, p. 300, doi. 10.1134/S102745101902023X
By:
- Bachurin, V. I.;
- Melesov, N. S.;
- Mironenko, A. A.;
- Parshin, E. O.;
- Rudy, A. S.;
- Simakin, S. G.;
- Churilov, A. B.
Publication type:
Article
Study of Multilayer Thin Film Structures by Rutherford Backscattering Spectrometry.
Published in:
Technical Physics Letters, 2019, v. 45, n. 6, p. 609, doi. 10.1134/S1063785019060191
By:
- Bachurin, V. I.;
- Melesov, N. S.;
- Parshin, E. O.;
- Rudy, A. S.;
- Churilov, A. B.
Publication type:
Article

Found: 9