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Surface‐Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi<sub>2</sub>Te<sub>4</sub> Thin Films (Adv. Funct. Mater. 28/2022)
- Published in:
- Advanced Functional Materials, 2022, v. 32, n. 28, p. 1, doi. 10.1002/adfm.202270162
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Surface‐Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi<sub>2</sub>Te<sub>4</sub> Thin Films (Adv. Funct. Mater. 28/2022).
- Published in:
- Advanced Functional Materials, 2022, v. 32, n. 28, p. 1, doi. 10.1002/adfm.202202234
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Surface‐Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi<sub>2</sub>Te<sub>4</sub> Thin Films.
- Published in:
- Advanced Functional Materials, 2022, v. 32, n. 28, p. 1, doi. 10.1002/adfm.202202234
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- Article
Front Cover: Magneto‐Optical Sensing Beyond the Shot Noise Limit (Adv. Quantum Technol. 1/2022).
- Published in:
- Advanced Quantum Technologies, 2022, v. 5, n. 1, p. 1, doi. 10.1002/qute.202270011
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Magneto‐Optical Sensing Beyond the Shot Noise Limit.
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- Advanced Quantum Technologies, 2022, v. 5, n. 1, p. 1, doi. 10.1002/qute.202100107
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- Article
Electron pairing and nematicity in LaAlO<sub>3</sub>/SrTiO<sub>3</sub> nanostructures.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-43539-x
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Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics.
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- Small Science, 2022, v. 2, n. 2, p. 1, doi. 10.1002/smsc.202100087
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Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics.
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- Small Science, 2022, v. 2, n. 2, p. 1, doi. 10.1002/smsc.202100087
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- Article
Monolayer Superconductivity and Tunable Topological Electronic Structure at the Fe(Te,Se)/Bi<sub>2</sub>Te<sub>3</sub> Interface.
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- Advanced Materials, 2023, v. 35, n. 22, p. 1, doi. 10.1002/adma.202210940
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Extreme Reconfigurable Nanoelectronics at the CaZrO<sub>3</sub>/SrTiO<sub>3</sub> Interface.
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- Advanced Materials, 2018, v. 30, n. 33, p. 1, doi. 10.1002/adma.201801794
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Angular‐Momentum Transfer Mediated by a Vibronic‐Bound‐State.
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- Advanced Science, 2024, v. 11, n. 2, p. 1, doi. 10.1002/advs.202304698
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- Article