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Field effects in electron-irradiated GaP LEDs.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 179, doi. 10.15407/spqeo25.02.179
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- Article
Electrophysical characteristics of GaAs<sub>1–х</sub>P<sub>х</sub> LEDs irradiated by 2 МeV electrons.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 201, doi. 10.15407/spqeo23.02.201
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- Article
Acoustic-stimulated relaxation of GaAs<sub>1-x</sub>P<sub>x</sub> LEDs electroluminescence intensity.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 34, doi. 10.15407/spqeo19.01.034
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- Article
Acoustic-wave-stimulated transformations of radiation defects in γ-irradiated n-type silicon crystals.
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- Technical Physics Letters, 2006, v. 32, n. 7, p. 586, doi. 10.1134/S106378500607011X
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- Article
Ultrasound-stimulated degradation–relaxation effects in gallium phosphide light-emitting p–n structures.
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- Technical Physics Letters, 1998, v. 24, n. 8, p. 608, doi. 10.1134/1.1262215
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- Article
Clusters of Point Defects Near Dislocations as a Tool to Control CdZnTe Electrical Parameters by Ultrasound.
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- Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4370, doi. 10.1007/s11664-018-6332-4
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- Article
Charge Carrier Mobility in n-Cd[sub x]Hg[sub 1 – ][sub x]Te Crystals Subjected to Dynamic Ultrasonic Stressing.
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- Semiconductors, 2000, v. 34, n. 6, p. 644, doi. 10.1134/1.1188046
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- Article
Acoustostimulated activation of bound defects in CdHgTe alloys.
- Published in:
- Semiconductors, 1999, v. 33, n. 4, p. 398, doi. 10.1134/1.1187701
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- Article