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Radiation Hardness of Subterahertz Radiation Source Based on Heterodyne on Gunn Diode Generator and Superlattice Multiplier.
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- Technical Physics, 2024, v. 69, n. 2, p. 271, doi. 10.1134/S1063784224010195
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Theoretical and experimental studies of the current-voltage and capacitance-voltage of HEMT structures and field-effect transistors.
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- Semiconductors, 2016, v. 50, n. 12, p. 1574, doi. 10.1134/S1063782616120216
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Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account.
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- Semiconductors, 2016, v. 50, n. 12, p. 1579, doi. 10.1134/S1063782616120149
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- Article
Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range.
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- Semiconductors, 2016, v. 50, n. 11, p. 1526, doi. 10.1134/S1063782616110208
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On the radiation resistance of planar Gunn diodes with δ-doped layers.
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- Semiconductors, 2015, v. 49, n. 11, p. 1459, doi. 10.1134/S1063782615110160
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- Article
Morphological Identification of the East Asian Voles Alexandromys Species (Rodentia, Cricetidae) of Russia and Neighboring Territories.
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- Biology Bulletin, 2018, v. 45, n. 8, p. 872, doi. 10.1134/S1062359018080071
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Narrow phylogeographic origin of five introduced populations of the Siberian chipmunk Tamias ( Eutamias) sibiricus (Laxmann, 1769) (Rodentia: Sciuridae) established in France.
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- Biological Invasions, 2013, v. 15, n. 6, p. 1201, doi. 10.1007/s10530-012-0375-x
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Simulation of the Response of a Low-Barrier Mott Diode to the Influence of Heavy Charged Particles from Outer Space.
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- Technical Physics Letters, 2021, v. 47, n. 4, p. 305, doi. 10.1134/S1063785021030287
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Modeling the Response of a Microwave Low-Barrier Uncooled Mott Diode to the Action of Heavy Ions of Outer Space and Femtosecond Laser Pulses.
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- Semiconductors, 2021, v. 55, n. 10, p. 780, doi. 10.1134/S1063782621090177
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Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range.
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- Semiconductors, 2020, v. 54, n. 10, p. 1360, doi. 10.1134/S1063782620100073
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- Article
Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices.
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- Semiconductors, 2019, v. 53, n. 9, p. 1192, doi. 10.1134/S1063782619090124
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Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices.
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- Semiconductors, 2018, v. 52, n. 11, p. 1448, doi. 10.1134/S1063782618110192
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- Article
Optimization of the superlattice parameters for THz diodes.
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- Semiconductors, 2017, v. 51, n. 11, p. 1439, doi. 10.1134/S1063782617110227
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Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects.
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- Semiconductors, 2017, v. 51, n. 11, p. 1435, doi. 10.1134/S1063782617110288
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- Article