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Interface Engineering Enabling Next Generation GaN-on-Diamond Power Devices.
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- Journal of Electronic Materials, 2021, v. 50, n. 8, p. 4239, doi. 10.1007/s11664-021-09011-6
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Study on the Influence of KOH Wet Treatment on Red μLEDs.
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- Crystals (2073-4352), 2023, v. 13, n. 12, p. 1611, doi. 10.3390/cryst13121611
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Surface Dispersion Suppression in High-Frequency GaN Devices.
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- Crystals (2073-4352), 2022, v. 12, n. 10, p. 1461, doi. 10.3390/cryst12101461
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- Article
Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing.
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- Coatings (2079-6412), 2024, v. 14, n. 4, p. 496, doi. 10.3390/coatings14040496
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- Article
EFFECT OF RAPID THERMAL ANNEALING ON THE Mg-DOPED GaN/Si FILM.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2006, v. 20, n. 25-27, p. 4034, doi. 10.1142/S0217979206040817
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- Article
Failure of submarine cables used in high‐voltage power transmission: Characteristics, mechanisms, key issues and prospects.
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- IET Generation, Transmission & Distribution (Wiley-Blackwell), 2021, v. 15, n. 9, p. 1387, doi. 10.1049/gtd2.12117
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Partial Discharge Pattern Recognition of Transformers Based on MobileNets Convolutional Neural Network.
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- Applied Sciences (2076-3417), 2021, v. 11, n. 15, p. 6984, doi. 10.3390/app11156984
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Parameter Optimization of Double-Excess Runoff Generation Model.
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- Polish Journal of Environmental Studies, 2018, v. 27, n. 2, p. 809, doi. 10.15244/pjoes/70626
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- Article
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1532, doi. 10.1002/pssa.201001036
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Extraction efficiency simulation in deep ultraviolet AlGaN light emitting diodes.
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- Optical & Quantum Electronics, 2021, v. 53, n. 7, p. 1, doi. 10.1007/s11082-021-03043-2
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- Article
The Electronic and Optical Properties of InSe-GeTe Heterobilayer via Applying Biaxial Strain.
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- Nanomaterials (2079-4991), 2019, v. 9, n. 12, p. 1705, doi. 10.3390/nano9121705
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- Article