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Die Erfindung effizienter blauer InGaN-Leuchtdioden: eine Hintergrundgeschichte (Nobel-Aufsatz).
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- Angewandte Chemie, 2015, v. 127, n. 27, p. 7880, doi. 10.1002/ange.201500591
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- Article
5‐azacytidine supports the long‐term repopulating activity of cord blood CD34+ cells.
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- American Journal of Hematology, 2004, v. 77, n. 3, p. 313, doi. 10.1002/ajh.20178
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- Article
Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication.
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- Scientific Reports, 2015, p. 18690, doi. 10.1038/srep18690
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- Article
The soluble form of the IL-6 receptor (slL-6Rα) is a potent growth factor for AIDS-associated Kaposi's sarcoma (KS) cells; the soluble form of gp130 is antagonistic for sIL-6Rα-induced AIDS-KS cell growth.
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- International Immunology, 1996, v. 8, n. 4, p. 595, doi. 10.1093/intimm/8.4.595
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- Article
Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates.
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- Physica Status Solidi - Rapid Research Letters, 2008, v. 2, n. 2, p. 89, doi. 10.1002/pssr.200701313
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- Article
High power and high efficiency green light emitting diode on free-standing semipolar (11 $ \bar 2 $.
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- Physica Status Solidi - Rapid Research Letters, 2007, v. 1, n. 4, p. 162, doi. 10.1002/pssr.200701098
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- Article
Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs.
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- Physica Status Solidi - Rapid Research Letters, 2007, v. 1, n. 3, p. 125, doi. 10.1002/pssr.200701061
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- Article
Change in Liver Fibrosis Associates with Progress of Diabetic Nephropathy in Patients with Nonalcoholic Fatty Liver Disease.
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- Nutrients, 2023, v. 15, n. 14, p. 3248, doi. 10.3390/nu15143248
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- Article
InGaN-based blue/green LEDs and laser diodes.
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- Advanced Materials, 1996, v. 8, n. 8, p. 689, doi. 10.1002/adma.19960080821
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- Article
DNA SYNTHESIS-POTENTIATING ACTIVITY ON MOUSE THYMOCYTES OF SYNOVIAL FLUID OF RHEUMATOID ARTHRITIS PATIENTS.
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- Pathology International, 1982, v. 32, n. 3, p. 491, doi. 10.1111/j.1440-1827.1982.tb01405.x
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- Article
ENHANCEMENT OF PHYTOHEMAGGLUTININ-INDUCED DNA SYNTHESIS OF MOUSE THYMOCYTES AND T-LYMPHOCYTES BY A NEUTRAL PROTEASE OF POLYMORPHONUCLEAR LEUKOCYTES.
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- Pathology International, 1977, v. 27, n. 6, p. 857, doi. 10.1111/j.1440-1827.1977.tb03040.x
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- Article
The REM Rhythm of Depression in Daytime and Sleep EEG.
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- Psychiatry & Clinical Neurosciences, 1992, v. 46, n. 1, p. 241, doi. 10.1111/j.1440-1819.1992.tb00851.x
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- Article
bcl-2 Regulation in Normal Resting Lymphocytes and Lymphoblasts.
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- Cancer Science, 1994, v. 85, n. 3, p. 260, doi. 10.1111/j.1349-7006.1994.tb02091.x
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- Article
Metalorganic chemical vapor deposition of InN quantum dots and nanostructures.
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- Light: Science & Applications, 2021, v. 10, n. 1, p. 1, doi. 10.1038/s41377-021-00593-8
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- Article
InGaN Based C-Plane Blue Laser Diodes on Strain Relaxed Template with Reduced Absorption Loss.
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- Crystals (2073-4352), 2022, v. 12, n. 9, p. N.PAG, doi. 10.3390/cryst12091230
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- Article
Demonstration of C-Plane InGaN-Based Blue Laser Diodes Grown on a Strain-Relaxed Template.
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- Crystals (2073-4352), 2022, v. 12, n. 9, p. N.PAG, doi. 10.3390/cryst12091208
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- Article
Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer.
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- Crystals (2073-4352), 2022, v. 12, n. 8, p. 1144, doi. 10.3390/cryst12081144
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- Article
Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer.
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- Crystals (2073-4352), 2022, v. 12, n. 5, p. N.PAG, doi. 10.3390/cryst12050721
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- Article
Progress of InGaN-Based Red Micro-Light Emitting Diodes.
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- Crystals (2073-4352), 2022, v. 12, n. 4, p. 541, doi. 10.3390/cryst12040541
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- Article
Semipolar { 20 2 ¯ 1 } GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing.
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- Crystals (2073-4352), 2021, v. 11, n. 12, p. 1563, doi. 10.3390/cryst11121563
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- Article
Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine.
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- Crystals (2073-4352), 2021, v. 11, n. 11, p. 1412, doi. 10.3390/cryst11111412
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- Article
InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates.
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- Crystals (2073-4352), 2021, v. 11, n. 11, p. 1364, doi. 10.3390/cryst11111364
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- Article
Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers.
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- Crystals (2073-4352), 2021, v. 11, n. 10, p. 1168, doi. 10.3390/cryst11101168
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- Article
Highly Conductive n-Al 0.65 Ga 0.35 N Grown by MOCVD Using Low V/III Ratio.
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- Crystals (2073-4352), 2021, v. 11, n. 8, p. 1006, doi. 10.3390/cryst11081006
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- Article
Mouse monoclonal antibodies detecting disialogangliosides on mouse and human t lymphomas.
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- International Journal of Cancer, 1988, v. 41, n. 2, p. 267, doi. 10.1002/ijc.2910410218
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- Article
Background Story of the Invention of Efficient InGaN Blue-Light-Emitting Diodes (Nobel Lecture).
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- Angewandte Chemie International Edition, 2015, v. 54, n. 27, p. 7770, doi. 10.1002/anie.201500591
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- Article
Optimizing Polarization Selective Unidirectional Photoluminescence from Phased‐Array Metasurfaces.
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- Advanced Optical Materials, 2024, v. 12, n. 16, p. 1, doi. 10.1002/adom.202303186
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- Article
Transmission Geometry Laser Lighting with a Compact Emitter.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 22, p. 1, doi. 10.1002/pssa.202000391
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- Article
Transmission Geometry Laser Lighting with a Compact Emitter.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 22, p. 1, doi. 10.1002/pssa.202070062
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- Article
Research Toward a Heterogeneously Integrated InGaN Laser on Silicon.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900770
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- Article
Inhomogeneous Current Injection and Filamentary Lasing of Semipolar (2021¯) Blue GaN‐Based Vertical‐Cavity Surface‐Emitting Lasers with Buried Tunnel Junctions.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900718
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- Article
Techniques to reduce thermal resistance in flip-chip GaN-based VCSELs.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600819
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Techniques to reduce thermal resistance in flip-chip GaN-based VCSELs (Phys. Status Solidi A 8∕2017).
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201770149
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- Article
Optoelectronic properties of doped hydrothermal ZnO thin films.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 6, p. n/a, doi. 10.1002/pssa.201600941
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- Article
Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture (Phys. Status Solidi A 4∕2016).
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1096, doi. 10.1002/pssa.201670624
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- Article
Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 953, doi. 10.1002/pssa.201532540
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- Article
Dynamical coupling between a nuclear spin ensemble and electromechanical phonons.
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- Nature Communications, 2018, v. 9, n. 1, p. 1, doi. 10.1038/s41467-018-05463-3
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- Article
Efficient Blue Light-emitting Diodes Leading to Bright and Energy-saving White Light Sources.
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- AAPPS Bulletin, 2014, v. 24, n. 6, p. 3
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- Article
Heterogeneity of active species in metallocene catalysts.
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- Macromolecular Rapid Communications, 1995, v. 16, n. 5, p. 379, doi. 10.1002/marc.1995.030160506
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- Article
High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1187, doi. 10.1049/el.2015.1647
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- Article
High optical power and low‐efficiency droop blue light‐emitting diodes using compositionally step‐graded InGaN barrier.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1187, doi. 10.1049/el.2015.1647
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- Article
Aging and Hypertension Are Independent Risk Factors for Reduced Number of Circulating Endothelial Progenitor Cells.
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- American Journal of Hypertension, 2008, v. 21, n. 11, p. 1203, doi. 10.1038/ajh.2008.278
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- Article
Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror †.
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- Photonics, 2023, v. 10, n. 6, p. 646, doi. 10.3390/photonics10060646
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- Article
Light-emitting metalenses and meta-axicons for focusing and beaming of spontaneous emission.
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- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-23433-0
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- Article
miR-155, a Modulator of FOXO3a Protein Expression, Is Underexpressed and Cannot Be Upregulated by Stimulation of HOZOT, a Line of Multifunctional Treg.
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- PLoS ONE, 2011, v. 6, n. 2, p. 1, doi. 10.1371/journal.pone.0016841
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- Article
Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD.
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- Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3450, doi. 10.1007/s11664-019-07875-3
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- Article
Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films.
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- Journal of Electronic Materials, 2017, v. 46, n. 3, p. 1821, doi. 10.1007/s11664-016-5235-5
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- Article
Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 15, doi. 10.1007/s11664-009-0969-y
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- Article
Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures.
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- Journal of Electronic Materials, 2009, v. 38, n. 6, p. 756, doi. 10.1007/s11664-009-0777-4
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- Article
Microstructure and Enhanced Morphology of Planar Nonpolar m-Plane GaN Grown by Hydride Vapor Phase Epitaxy.
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- Journal of Electronic Materials, 2005, v. 34, n. 4, p. 357, doi. 10.1007/s11664-005-0110-9
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- Article