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Heteropolytype Structures with SiC Quantum Dots.
- Published in:
- Technical Physics Letters, 2005, v. 31, n. 12, p. 997, doi. 10.1134/1.2150879
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- Article
GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers.
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- Technical Physics Letters, 2005, v. 31, n. 11, p. 915, doi. 10.1134/1.2136951
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- Article
Synthesis and Structural Characterization of a Heterocomposition Based on Porous Layers of SiC Polytypes.
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- Technical Physics Letters, 2004, v. 30, n. 11, p. 950, doi. 10.1134/1.1829352
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- Article
Features of the Structure of a Porous Silicon Carbide Layer Obtained by Electrochemical Etching of a 6H-SiC Substrate.
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- Technical Physics Letters, 2002, v. 28, n. 11, p. 935, doi. 10.1134/1.1526889
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- Article
Investigation of the Structure of (p)3C-SiC–(n)6H-SiC Heterojunctions.
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- Technical Physics Letters, 2001, v. 27, n. 12, p. 1052, doi. 10.1134/1.1432347
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- Article
Specific Properties of the PZT-Based Thin-Film Capacitor Structures with Excess Lead Oxide.
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- Technical Physics Letters, 2001, v. 27, n. 6, p. 467
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- Article
The Formation of β-FeSi[sub 2] Precipitates in Microcrystalline Si.
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- Semiconductors, 2002, v. 36, n. 11, p. 1235, doi. 10.1134/1.1521222
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- Article
Self-Organization Processes and Optical Activation of the Er[sup 3+] Ions in Amorphous Hydrogenated Er-Doped Silicon Films.
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- Semiconductors, 2001, v. 35, n. 6, p. 684, doi. 10.1134/1.1379404
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- Article
Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them
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- Semiconductors, 1998, v. 32, n. 5, p. 555, doi. 10.1134/1.1187437
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- Article