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High-Power Single-Mode 1.3-μm Lasers Based on InAs/AlGaAs/GaAs Quantum Dot Heterostructures.
- Published in:
- Technical Physics Letters, 2004, v. 30, n. 1, p. 9, doi. 10.1134/1.1646701
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- Article
InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25-1.33 μm Wavelength Range.
- Published in:
- Physica Status Solidi (B), 2001, v. 224, n. 3, p. 803, doi. 10.1002/(SICI)1521-3951(200104)224:3<803::AID-PSSB803>3.0.CO;2-T
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- Article
High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.
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- Semiconductors, 2004, v. 38, n. 6, p. 732, doi. 10.1134/1.1766381
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- Article
Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29μm.
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- Semiconductors, 2003, v. 37, n. 10, p. 1239, doi. 10.1134/1.1619525
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- Article
Design and Technology of Vertical-Cavity Surface-Emitting Lasers with Nonconducting Epitaxial Mirrors.
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- Semiconductors, 2003, v. 37, n. 10, p. 1234, doi. 10.1134/1.1619524
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- Article
Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.
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- Semiconductors, 2003, v. 37, n. 9, p. 1104, doi. 10.1134/1.1610128
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- Article
Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.
- Published in:
- Semiconductors, 2003, v. 37, n. 9, p. 1119, doi. 10.1134/1.1610131
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- Article