Found: 40
Select item for more details and to access through your institution.
Temperature Dependence of the Defect States in LWIR (100) and (111)B HgCdTe Epilayers for IR HOT Detectors.
- Published in:
- Journal of Electronic Materials, 2024, v. 53, n. 10, p. 5842, doi. 10.1007/s11664-024-11229-z
- By:
- Publication type:
- Article
Experimental Determination of the Dependence Between Spectral Response and Current–Voltage Characteristics for MWIR HgCdTe Detectors.
- Published in:
- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7060, doi. 10.1007/s11664-023-10654-w
- By:
- Publication type:
- Article
DLTS Study of Defects in HgCdTe Heterostructure Photodiode.
- Published in:
- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7074, doi. 10.1007/s11664-023-10653-x
- By:
- Publication type:
- Article
Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm.
- Published in:
- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7038, doi. 10.1007/s11664-023-10516-5
- By:
- Publication type:
- Article
Higher Operating Temperature IR Detectors of the MOCVD Grown HgCdTe Heterostructures.
- Published in:
- Journal of Electronic Materials, 2020, v. 49, n. 11, p. 6908, doi. 10.1007/s11664-020-08369-3
- By:
- Publication type:
- Article
Ultimate Performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb Longwave Photodetectors for High Operating Temperature Condition.
- Published in:
- Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6093, doi. 10.1007/s11664-019-07398-x
- By:
- Publication type:
- Article
Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice.
- Published in:
- Opto-Electronics Review, 2021, v. 29, n. 1, p. 1, doi. 10.24425/opelre.2021.135823
- By:
- Publication type:
- Article
2D material infrared and terahertz detectors: status and outlook.
- Published in:
- Opto-Electronics Review, 2020, v. 28, n. 3, p. 107, doi. 10.24425/opelre.2020.134459
- By:
- Publication type:
- Article
Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors.
- Published in:
- Opto-Electronics Review, 2020, v. 28, n. 2, p. 82, doi. 10.24425/opelre.2020.132504
- By:
- Publication type:
- Article
Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling.
- Published in:
- Opto-Electronics Review, 2019, v. 27, n. 3, p. 275, doi. 10.1016/j.opelre.2019.07.003
- By:
- Publication type:
- Article
Type-II superlattice detectors for free space optics applications and higher operating temperature conditions.
- Published in:
- Opto-Electronics Review, 2018, v. 26, n. 4, p. 279, doi. 10.1016/j.opelre.2018.08.001
- By:
- Publication type:
- Article
Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy.
- Published in:
- Opto-Electronics Review, 2016, v. 24, n. 1, p. -1, doi. 10.1515/oere-2016-0007
- By:
- Publication type:
- Article
Status of long-wave Auger suppressed HgCdTe detectors operating > 200 K.
- Published in:
- Opto-Electronics Review, 2015, v. 23, n. 4, p. 278, doi. 10.1515/oere-2015-0036
- By:
- Publication type:
- Article
MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions.
- Published in:
- Opto-Electronics Review, 2014, v. 22, n. 2, p. 118, doi. 10.2478/s11772-014-0186-y
- By:
- Publication type:
- Article
Barrier infrared detectors.
- Published in:
- Opto-Electronics Review, 2014, v. 22, n. 2, p. 127, doi. 10.2478/s11772-014-0187-x
- By:
- Publication type:
- Article
HOT infrared photodetectors.
- Published in:
- Opto-Electronics Review, 2013, v. 21, n. 2, p. 239, doi. 10.2478/s11772-013-0090-x
- By:
- Publication type:
- Article
Demonstration of a Dual-Band Mid-Wavelength HgCdTe Detector Operating at Room Temperature.
- Published in:
- Journal of Electronic Materials, 2018, v. 47, n. 10, p. 5752, doi. 10.1007/s11664-018-6182-0
- By:
- Publication type:
- Article
Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy.
- Published in:
- Journal of Electronic Materials, 2018, v. 47, n. 1, p. 299, doi. 10.1007/s11664-017-5766-4
- By:
- Publication type:
- Article
Optimization of a HOT LWIR HgCdTe Photodiode for Fast Response and High Detectivity in Zero-Bias Operation Mode.
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 10, p. 6045, doi. 10.1007/s11664-017-5562-1
- By:
- Publication type:
- Article
The Numerical-Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors.
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5471, doi. 10.1007/s11664-017-5513-x
- By:
- Publication type:
- Article
Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology.
- Published in:
- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4563, doi. 10.1007/s11664-016-4702-3
- By:
- Publication type:
- Article
Mid-Wavelength Infrared nB n for HOT Detectors.
- Published in:
- Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2963, doi. 10.1007/s11664-014-3161-y
- By:
- Publication type:
- Article
Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range.
- Published in:
- Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3309, doi. 10.1007/s11664-013-2737-2
- By:
- Publication type:
- Article
COMPUTER MODELING OF WATER CLEANING IN WETLAND TAKING INTO ACCOUNT OF SUFFOSION ANG COLMATATION.
- Published in:
- Eastern-European Journal of Enterprise Technologies, 2018, v. 91, n. 10, p. 38, doi. 10.15587/1729-4061.2018.123455
- By:
- Publication type:
- Article
Barrier Detectors Versus Homojunction Photodiode.
- Published in:
- Metrology & Measurement Systems, 2014, v. 21, n. 4, p. 675, doi. 10.2478/mms-2014-0058
- By:
- Publication type:
- Article
Study of the Effectiveness of Anodic Films as Surface Passivation for InAsSb Mid-Wave Infrared HOT Detectors.
- Published in:
- Acta Physica Polonica: A, 2018, v. 134, n. 4, p. 981, doi. 10.12693/APhysPolA.134.981
- By:
- Publication type:
- Article
Calculations of Dark Current in Interband Cascade Type-II Infrared InAs/GaSb Superlattice Detector.
- Published in:
- Acta Physica Polonica: A, 2017, v. 132, n. 4, p. 1415, doi. 10.12693/APhysPolA.132.1415
- By:
- Publication type:
- Article
Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates.
- Published in:
- Acta Physica Polonica: A, 2017, v. 132, n. 2, p. 322, doi. 10.12693/APhysPolA.132.322
- By:
- Publication type:
- Article
Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique.
- Published in:
- Acta Physica Polonica: A, 2017, v. 132, n. 2, p. 325, doi. 10.12693/APhysPolA.132.325
- By:
- Publication type:
- Article
Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy.
- Published in:
- Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2612-4
- By:
- Publication type:
- Article
Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlSb longwave infrared detector operating under thermoelectrical cooling.
- Published in:
- Optical & Quantum Electronics, 2020, v. 52, n. 2, p. 1, doi. 10.1007/s11082-019-2159-3
- By:
- Publication type:
- Article
Numerical analysis of HgCdTe dual-band infrared detector.
- Published in:
- Optical & Quantum Electronics, 2019, v. 51, n. 3, p. N.PAG, doi. 10.1007/s11082-019-1755-6
- By:
- Publication type:
- Article
High frequency response of LWIR HgCdTe photodiodes operated under zero-bias mode.
- Published in:
- Optical & Quantum Electronics, 2018, v. 50, n. 2, p. 0, doi. 10.1007/s11082-018-1336-0
- By:
- Publication type:
- Article
Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage condition.
- Published in:
- Optical & Quantum Electronics, 2018, v. 50, n. 1, p. 1, doi. 10.1007/s11082-017-1278-y
- By:
- Publication type:
- Article
Theoretical utmost performance of (100) mid-wave HgCdTe photodetectors.
- Published in:
- Optical & Quantum Electronics, 2017, v. 49, n. 1, p. 1, doi. 10.1007/s11082-016-0829-y
- By:
- Publication type:
- Article
HOT mid-wave HgCdTe nBn and pBp infrared detectors.
- Published in:
- Optical & Quantum Electronics, 2015, v. 47, n. 6, p. 1311, doi. 10.1007/s11082-014-0044-7
- By:
- Publication type:
- Article
Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector.
- Published in:
- Optical & Quantum Electronics, 2014, v. 46, n. 4, p. 581, doi. 10.1007/s11082-013-9849-z
- By:
- Publication type:
- Article
Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors.
- Published in:
- Bulletin of the Polish Academy of Sciences: Technical Sciences, 2020, v. 68, n. 4, p. 845, doi. 10.24425/bpasts.2020.134174
- By:
- Publication type:
- Article
Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors.
- Published in:
- Bulletin of the Polish Academy of Sciences: Technical Sciences, 2019, v. 67, n. 1, p. 141, doi. 10.24425/bpas.2019.127343
- By:
- Publication type:
- Article
Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design.
- Published in:
- Bulletin of the Polish Academy of Sciences: Technical Sciences, 2018, v. 66, n. 3, p. 317, doi. 10.24425/123438
- By:
- Publication type:
- Article