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Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO2/ZrO2 Superlattice Structure.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200737
By:
- Bai, Na;
- Xue, Kan‐Hao;
- Huang, Jinhai;
- Yuan, Jun‐Hui;
- Wang, Wenlin;
- Mao, Ge‐Qi;
- Zou, Lanqing;
- Yang, Shengxin;
- Lu, Hong;
- Sun, Huajun;
- Miao, Xiangshui
Publication type:
Article
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging.
Published in:
Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-27575-z
By:
- Zhang, Ying;
- Mao, Ge-Qi;
- Zhao, Xiaolong;
- Li, Yu;
- Zhang, Meiyun;
- Wu, Zuheng;
- Wu, Wei;
- Sun, Huajun;
- Guo, Yizhong;
- Wang, Lihua;
- Zhang, Xumeng;
- Liu, Qi;
- Lv, Hangbing;
- Xue, Kan-Hao;
- Xu, Guangwei;
- Miao, Xiangshui;
- Long, Shibing;
- Liu, Ming
Publication type:
Article
HfOx/AlOy Superlattice‐Like Memristive Synapse.
Published in:
Advanced Science, 2022, v. 9, n. 21, p. 1, doi. 10.1002/advs.202201446
By:
- Wang, Chengxu;
- Mao, Ge‐Qi;
- Huang, Menghua;
- Huang, Enming;
- Zhang, Zichong;
- Yuan, Junhui;
- Cheng, Weiming;
- Xue, Kan‐Hao;
- Wang, Xingsheng;
- Miao, Xiangshui
Publication type:
Article
HfOx/AlOy Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022).
Published in:
Advanced Science, 2022, v. 9, n. 21, p. 1, doi. 10.1002/advs.202270131
By:
- Wang, Chengxu;
- Mao, Ge‐Qi;
- Huang, Menghua;
- Huang, Enming;
- Zhang, Zichong;
- Yuan, Junhui;
- Cheng, Weiming;
- Xue, Kan‐Hao;
- Wang, Xingsheng;
- Miao, Xiangshui
Publication type:
Article
Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics.
Published in:
Nano Research, 2022, v. 15, n. 4, p. 3667, doi. 10.1007/s12274-021-4047-y
By:
- Yuan, Peng;
- Mao, Ge-Qi;
- Cheng, Yan;
- Xue, Kan-Hao;
- Zheng, Yunzhe;
- Yang, Yang;
- Jiang, Pengfei;
- Xu, Yannan;
- Wang, Yuan;
- Wang, Yuhao;
- Ding, Yaxin;
- Chen, Yuting;
- Dang, Zhiwei;
- Tai, Lu;
- Gong, Tiancheng;
- Luo, Qing;
- Miao, Xiangshui;
- Liu, Qi
Publication type:
Article

Found: 5

Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO<sub>2</sub>/ZrO<sub>2</sub> Superlattice Structure.

Evolution of the conductive filament system in HfO<sub>2</sub>-based memristors observed by direct atomic-scale imaging.

HfO<sub>x</sub>/AlO<sub>y</sub> Superlattice‐Like Memristive Synapse.

HfO<sub>x</sub>/AlO<sub>y</sub> Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022).

Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics.