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Resonant Optical Phenomena in Heterogeneous Plasmon Nanostructures of Noble Metals: A Review.
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- Theoretical & Experimental Chemistry, 2020, v. 56, n. 2, p. 67, doi. 10.1007/s11237-020-09642-6
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Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 46
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Optical and photoluminescent properties of Ag/Al<sub>2</sub>O<sub>3</sub> nanocomposite films obtained by pulsed laser deposition.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 3, p. 298
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Photoluminescent properties of Al<sub>2</sub>O<sub>3</sub> films containing gold nanoparticles, which are prepared by pulse laser deposition.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 2, p. 165
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Charge characteristics of the MOS structures with oxide films containing Si nanocrystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 46, doi. 10.15407/spqeo10.02.046
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Zn and Mn impurity effect on electron and luminescent properties of porous silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 5
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A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 4, p. 487
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- Article
Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 4, p. 471
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Regularities of visible photoluminescence creation in low-dimensional silicon structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 3, p. 303, doi. 10.15407/spqeo6.03.303
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- Article
Photoluminescence of germanium quantum dots formed by pulsed laser ablation.
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- Semiconductors, 2007, v. 41, n. 2, p. 172, doi. 10.1134/S106378260702011X
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A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon.
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- Semiconductors, 2006, v. 40, n. 2, p. 175, doi. 10.1134/S1063782606020126
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Edge Photoluminescence of Single-Crystal Silicon at Room Temperature.
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- Semiconductors, 2005, v. 39, n. 4, p. 406, doi. 10.1134/1.1900253
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ESR Studies of Nanocrystalline Silicon Films Obtained by Pulsed Laser Ablation of Silicon Targets.
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- Semiconductors, 2004, v. 38, n. 5, p. 598, doi. 10.1134/1.1755899
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Spectra of Photoluminescence from Silicon Nanocrystals.
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- Semiconductors, 2003, v. 37, n. 3, p. 336, doi. 10.1134/1.1561529
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Photoluminescent and Electronic Properties of Nanocrystalline Silicon Doped with Gold.
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- Semiconductors, 2002, v. 36, n. 9, p. 1027, doi. 10.1134/1.1507286
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Kinetics of Exciton Photoluminescence in Low-Dimensional Silicon Structures.
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- Semiconductors, 2001, v. 35, n. 12, p. 1383, doi. 10.1134/1.1427976
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Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures.
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- Semiconductors, 1999, v. 33, n. 11, p. 1202, doi. 10.1134/1.1187849
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Photosensitive structures based on porous silicon.
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- Semiconductors, 1999, v. 33, n. 3, p. 327, doi. 10.1134/1.1187689
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Optical Characterization of SERS Substrates Based on Porous Au Films Prepared by Pulsed Laser Deposition.
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- Journal of Nanomaterials, 2015, v. 2015, p. 1, doi. 10.1155/2015/203515
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- Article