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Photoelectric properties of single crystals Ag<sub>3</sub>In<sub>5</sub>Se<sub>9</sub>.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 3, p. 25, doi. 10.15407/spqeo9.03.025
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- Article
Features of the Dynamics of the Photoluminescence Spectrum of the Cu<sub>3</sub>In<sub>5</sub>S<sub>9</sub> Crystal with a Change in the Intensity of Laser Excitation.
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- Optics & Spectroscopy, 2022, v. 130, n. 5, p. 350, doi. 10.1134/S0030400X22060030
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Specific Features of Photoluminescence and Nanosecond Relaxation of Photocurrent in CuIn5S8 Crystals upon Strong Optical Excitation.
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- Optics & Spectroscopy, 2020, v. 128, n. 12, p. 1978, doi. 10.1134/S0030400X20120905
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- Article
Nonlinear Optical Absorption in GaSe upon Laser Excitation.
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- Optics & Spectroscopy, 2020, v. 128, n. 4, p. 501, doi. 10.1134/S0030400X20040189
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- Article
Optical and Photoelectric Properties of GaS Thin Films and GaS/InSe Heterostructure.
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- Optics & Spectroscopy, 2019, v. 126, n. 5, p. 458, doi. 10.1134/S0030400X19050102
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- Article
Optical Properties of Boron-Doped Gallium Selenide.
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- Optics & Spectroscopy, 2017, v. 123, n. 6, p. 875, doi. 10.1134/S0030400X17120074
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- Article
Optical Properties of FeGaInS<sub>4</sub> Single Crystals Under Laser Excitation.
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- Journal of Applied Spectroscopy, 2022, v. 89, n. 6, p. 1147, doi. 10.1007/s10812-023-01480-3
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- Article
Conductivity Inversion in Thin n-InSe Films under Laser Irradiation.
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- Technical Physics, 2019, v. 64, n. 4, p. 555, doi. 10.1134/S1063784219040145
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- Article
Band gap renormalization of the InSe by laser radiation.
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- Modern Physics Letters B, 2022, v. 36, n. 13, p. 1, doi. 10.1142/S0217984922500671
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Thermal nonlinearities in GaSe.
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- Chalcogenide Letters, 2021, v. 18, n. 4, p. 155, doi. 10.15251/cl.2021.184.155
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- Article
BANDFILLING EFFECT IN GaSe AND InSe AT HIGH OPTICAL EXCHANGE LEVELS.
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- Chalcogenide Letters, 2019, v. 16, n. 10, p. 465
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- Article
Photoluminescence of GaS–GaSe Heterostructures Upon Two- and Three-Photon Excitation by Laser Radiation.
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- Russian Physics Journal, 2023, v. 65, n. 9, p. 1475, doi. 10.1007/s11182-023-02793-8
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- Article