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Ultraviolet light scattering scanning flow cytometry in the characterization of submicron microparticles.
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- Cytometry. Part A, 2023, v. 103, n. 9, p. 736, doi. 10.1002/cyto.a.24769
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- Article
A light scatter based model relating erythrocyte vesiculation to lifetime in circulation.
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- Cytometry. Part A, 2023, v. 103, n. 9, p. 712, doi. 10.1002/cyto.a.24765
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- Article
Erythrocyte lysis and angle‐resolved light scattering measured by scanning flow cytometry result to 48 indices quantifying a gas exchange function of the human organism.
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- Cytometry. Part A, 2023, v. 103, n. 1, p. 39, doi. 10.1002/cyto.a.24554
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- Article
Proposed Dynamics of CDB3 Activation in Human Erythrocytes by Nifedipine Studied with Scanning Flow Cytometry.
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- Cytometry. Part A, 2019, v. 95, n. 12, p. 1275, doi. 10.1002/cyto.a.23918
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- Article
Calibration‐free quantitative immunoassay by flow cytometry: Theoretical consideration and practical implementation for IgG antibody binding to CD14 receptors on human leukocytes.
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- Cytometry. Part A, 2018, v. 93, n. 7, p. 695, doi. 10.1002/cyto.a.23494
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- Article
Ionic Conductivity of Lithium Phosphides.
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- Crystals (2073-4352), 2023, v. 13, n. 5, p. 756, doi. 10.3390/cryst13050756
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- Article
Light-scattering gating and characterization of plasma microparticles.
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- Journal of Biomedical Optics, 2016, v. 21, n. 11, p. 1, doi. 10.1117/1.JBO.21.11.115003
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- Article
Additivity of light-scattering patterns of aggregated biological particles.
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- Journal of Biomedical Optics, 2014, v. 19, n. 8, p. 1, doi. 10.1117/1.JBO.19.8.085004
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- Article
Is there a difference between T- and B-lymphocyte morphology?
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- Journal of Biomedical Optics, 2009, v. 14, n. 6, p. 064036, doi. 10.1117/1.3275471
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- Article
Light scattering by neutrophils: model, simulation, and experiment.
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- Journal of Biomedical Optics, 2008, v. 13, n. 5, p. 54057, doi. 10.1117/1.2992140
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- Article
Radio Absorber with High Angular Stability of Resonance Frequency Based on Artificial Magnetic Conductor and Resistive Film.
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- Journal of Communications Technology & Electronics, 2023, v. 68, n. 8, p. 896, doi. 10.1134/S1064226923070045
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- Article
Artificial Magnetic Conductor Based on a Composite Material with Anisotropic Dielectric Permittivity and Its Application as a Small Screen.
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- Journal of Communications Technology & Electronics, 2022, v. 67, n. 9, p. 1055, doi. 10.1134/S1064226922090078
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- Article
Effect of Resonance Responses of Spatially Separated and Independently Electrically Controlled Metastructures with Varactors on Microwave Interferogram of Meta-Interferometer.
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- Journal of Communications Technology & Electronics, 2021, v. 66, n. 12, p. 1307, doi. 10.1134/S1064226921120147
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- Article
Frequency Control of a Resonant Radio Absorber with a Free Space.
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- Journal of Communications Technology & Electronics, 2021, v. 66, n. 4, p. 386, doi. 10.1134/S1064226921040057
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- Article
Resonance Radar Absorber Matched with Free Space at a Given Frequency.
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- Journal of Communications Technology & Electronics, 2020, v. 65, n. 6, p. 579, doi. 10.1134/S1064226920060157
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- Article
Chylomicrons against light scattering: The battle for characterization.
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- Journal of Biophotonics, 2018, v. 11, n. 10, p. N.PAG, doi. 10.1002/jbio.201700381
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- Article
Comment on 'Braking of high-speed flows in the near-Earth tail' by K. Shiokawa, W. Baumjohann, and G. Haerendel.
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- Geophysical Research Letters, 1998, v. 25, n. 18, p. 3501, doi. 10.1029/98GL02629
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- Article
Direct-driven mechanism for geomagnetic storms.
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- Geophysical Research Letters, 1996, v. 23, n. 13, p. 1689, doi. 10.1029/96GL01025
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- Article
New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate.
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- Crystallography Reports, 2019, v. 64, n. 2, p. 205, doi. 10.1134/S1063774519020111
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- Article
Epitaxial low-temperature growth of InGaAs films on GaAs(100) and GaAs(111) A substrates using a metamorphic buffer.
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- Crystallography Reports, 2017, v. 62, n. 6, p. 947, doi. 10.1134/S1063774517060104
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- Article
Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411) A substrates.
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- Crystallography Reports, 2017, v. 62, n. 4, p. 589, doi. 10.1134/S1063774517030063
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- Article
Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111) A substrates.
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- Crystallography Reports, 2017, v. 62, n. 1, p. 82, doi. 10.1134/S1063774517010072
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- Article
Structural and electrophysical properties of InAlAs/InGaAs/InAlAs/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well.
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- Crystallography Reports, 2015, v. 60, n. 3, p. 397, doi. 10.1134/S1063774515030062
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- Article
Erratum to: 'Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well'.
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- 2015
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- Erratum
Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well.
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- Crystallography Reports, 2014, v. 59, n. 6, p. 900, doi. 10.1134/S1063774514060108
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- Article
Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures InAlAs/InGaAs/InAlAs containing superlattices with different numbers of periods in the metamorphic buffer.
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- Crystallography Reports, 2014, v. 59, n. 3, p. 425, doi. 10.1134/S1063774514030092
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- Article
X-Ray diffractometry of metamorphic nanoheterostructures.
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- Crystallography Reports, 2014, v. 59, n. 2, p. 258, doi. 10.1134/S1063774514020096
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- Article
Electrical and structural characteristics of metamorphic In<sub>0.38</sub>Al<sub>0.62</sub>As/In<sub>0.37</sub>Ga<sub>0.63</sub>As/In<sub>0.38</sub>Al<sub>0.62</sub>As HEMT nanoheterostructures.
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- Crystallography Reports, 2013, v. 58, n. 6, p. 914, doi. 10.1134/S1063774513060114
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- Article
Super-resolved calibration-free flow cytometric characterization of platelets and cell-derived microparticles in platelet-rich plasma.
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- Cytometry. Part A, 2016, v. 89, n. 2, p. 159, doi. 10.1002/cyto.a.22621
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- Article
High-precision characterization of individual E. coli cell morphology by scanning flow cytometry.
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- Cytometry. Part A, 2013, v. 83A, n. 6, p. 568, doi. 10.1002/cyto.a.22294
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- Article
Polarized light-scattering profile-advanced characterization of nonspherical particles with scanning flow cytometry.
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- Cytometry. Part A, 2011, v. 79A, n. 7, p. 570, doi. 10.1002/cyto.a.21074
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- Article
OPTIMIZATION METHODS FOR CHARACTERIZATION OF SINGLE PARTICLES FROM LIGHT SCATTERING PATTERNS.
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- AAPP Physical, Mathematical & Natural Sciences / Atti della Accademia Peloritana dei Pericolanti: Classe di Scienze Fisiche, Matematiche e Naturali, 2011, v. 89, n. S1, p. 096-1, doi. 10.1478/C1V89S1P096
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- Article
Ballooning instability at the plasma sheet-lobe interface and its implications for polar arc formation.
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- Journal of Geophysical Research. Space Physics, 2006, v. 111, n. A11, p. n/a, doi. 10.1029/2005JA011092
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- Article
High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2016, v. 10, n. 3, p. 495, doi. 10.1134/S1027451016030095
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Features of modern secondary school teacher's value-based attitude to health and emotional burnout.
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- Revista Espacios, 2019, v. 40, n. 29, p. 1
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On the identification of plasma sheet flapping waves observed by Cluster.
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- Geophysical Research Letters, 2005, v. 32, n. 2, p. n/a, doi. 10.1029/2004GL021552
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- Article
Analysis of Sub-Micron Spherical Particles using Scanning Flow Cytometry.
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- Particle & Particle Systems Characterization, 2000, v. 17, n. 5/6, p. 225, doi. 10.1002/1521-4117(200012)17:5/6<225::AID-PPSC225>3.0.CO;2-8
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- Article
Electrical and thermal properties of photoconductive antennas based on InGaAs ( x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation.
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- Semiconductors, 2017, v. 51, n. 9, p. 1218, doi. 10.1134/S1063782617090160
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- Article
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates.
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- Semiconductors, 2017, v. 51, n. 6, p. 760, doi. 10.1134/S1063782617060100
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- Article
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates.
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- Semiconductors, 2017, v. 51, n. 4, p. 503, doi. 10.1134/S1063782617040054
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- Article
Terahertz radiation in InGaAs grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation.
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- Semiconductors, 2017, v. 51, n. 4, p. 509, doi. 10.1134/S1063782617040170
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- Article
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme.
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- Semiconductors, 2017, v. 51, n. 4, p. 514, doi. 10.1134/S106378261704008X
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- Article
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates.
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- Semiconductors, 2017, v. 51, n. 3, p. 310, doi. 10.1134/S1063782617030071
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- Article
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures.
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- Semiconductors, 2016, v. 50, n. 10, p. 1377, doi. 10.1134/S1063782616100134
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- Article
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ SiN passivation.
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- Semiconductors, 2016, v. 50, n. 10, p. 1416, doi. 10.1134/S1063782616100225
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- Article
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates.
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- Semiconductors, 2016, v. 50, n. 2, p. 185, doi. 10.1134/S1063782616020123
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- Article
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates.
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- Semiconductors, 2016, v. 50, n. 2, p. 195, doi. 10.1134/S1063782616020081
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- Article
Laser-assisted simulation of transient radiation effects in heterostructure components based on AB semiconductor compounds.
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- Semiconductors, 2016, v. 50, n. 2, p. 222, doi. 10.1134/S1063782616020093
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- Article
Photoluminescence properties of modulation-doped InAlAs/InGaAs/InAlAs structures with strained inas and gaas nanoinserts in the quantum well.
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- Semiconductors, 2015, v. 49, n. 9, p. 1207, doi. 10.1134/S1063782615090122
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Photoluminescence of heterostructures containing an InGaAs quantum well with a high in content at different excitation powers.
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- Semiconductors, 2015, v. 49, n. 9, p. 1218, doi. 10.1134/S1063782615090183
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- Article