Found: 15
Select item for more details and to access through your institution.
Synthesis, Structure, Physical Properties, and Displacement Current Measurement of an n-Type Organic Semiconductor: 2:3,5:6-Bis(1,1-dicyanoethylene-2,2-dithiolate)-quinone.
- Published in:
- Australian Journal of Chemistry, 2012, v. 65, n. 12, p. 1674, doi. 10.1071/CH12325
- By:
- Publication type:
- Article
Oxygen-crosslinked polysilane: the new class of Si-related material for electroluminescent devices.
- Published in:
- Polymers for Advanced Technologies, 1997, v. 8, n. 7, p. 465, doi. 10.1002/(SICI)1099-1581(199707)8:7<465::AID-PAT674>3.0.CO;2-8
- By:
- Publication type:
- Article
Roll‐to‐Roll Gravure‐Printed Carbon Nanotube‐based Transistor Arrays for a Digital Column Chromatograph (Adv. Mater. Technol. 6/2022).
- Published in:
- Advanced Materials Technologies, 2022, v. 7, n. 6, p. 1, doi. 10.1002/admt.202270026
- By:
- Publication type:
- Article
Roll‐to‐Roll Gravure‐Printed Carbon Nanotube‐based Transistor Arrays for a Digital Column Chromatograph.
- Published in:
- Advanced Materials Technologies, 2022, v. 7, n. 6, p. 1, doi. 10.1002/admt.202101243
- By:
- Publication type:
- Article
Scalability of carbon-nanotube-based thin film transistors for flexible electronic devices manufactured using an all roll-to-roll gravure printing system.
- Published in:
- Scientific Reports, 2015, p. 14459, doi. 10.1038/srep14459
- By:
- Publication type:
- Article
Blue organic light-emitting diode with a turn-on voltage of 1.47 V.
- Published in:
- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41208-7
- By:
- Publication type:
- Article
Solution‐Processed Silicane Field‐Effect Transistor: Operation Due to Stacking Defects on the Channel.
- Published in:
- Advanced Functional Materials, 2020, v. 30, n. 15, p. 1, doi. 10.1002/adfm.201908746
- By:
- Publication type:
- Article
Bottom Contact 100 nm Channel‐Length α‐In<sub>2</sub>Se<sub>3</sub> In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023)
- Published in:
- Advanced Science, 2023, v. 10, n. 29, p. 1, doi. 10.1002/advs.202303032
- By:
- Publication type:
- Article
Bottom Contact 100 nm Channel-Length α-In<sub>2</sub>Se<sub>3</sub> In-Plane Ferroelectric Memory.
- Published in:
- Advanced Science, 2023, v. 10, n. 29, p. 1, doi. 10.1002/advs.202303032
- By:
- Publication type:
- Article
Sensing Molecules and Electrons Using Nanostructured Materials and Devices.
- Published in:
- AAPPS Bulletin, 2019, v. 29, n. 3, p. 3
- By:
- Publication type:
- Article
Electron Transfer Enhanced by a Minimal Energetic Driving Force at the Organic‐Semiconductor Interface.
- Published in:
- Angewandte Chemie, 2024, v. 136, n. 37, p. 1, doi. 10.1002/ange.202407368
- By:
- Publication type:
- Article
Electron Transfer Enhanced by a Minimal Energetic Driving Force at the Organic‐Semiconductor Interface.
- Published in:
- Angewandte Chemie International Edition, 2024, v. 63, n. 37, p. 1, doi. 10.1002/anie.202407368
- By:
- Publication type:
- Article
Radio-frequency capacitance spectroscopy of metallic nanoparticles.
- Published in:
- Scientific Reports, 2015, p. 10858, doi. 10.1038/srep10858
- By:
- Publication type:
- Article
Fully R2R‐Printed Carbon‐Nanotube‐Based Limitless Length of Flexible Active‐Matrix for Electrophoretic Display Application.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901431
- By:
- Publication type:
- Article
An Electroactive Binder in the Formulation of IGZO Ink to Print an IGZO‐Based Rectifier for Harvesting Direct Current (DC) Power from the Near Field Communication (NFC) Signal of a Smartphone.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 8, p. 1, doi. 10.1002/aelm.201800078
- By:
- Publication type:
- Article