Found: 16
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Mechanism of Aluminum Droplet Nucleation and Ripening on GaAs(001) Surface by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2023, v. 52, n. 1, p. 463, doi. 10.1007/s11664-022-10012-2
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- Article
Native Point Defects in Monolayer Hexagonal Boron Phosphide from First Principles.
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- Journal of Electronic Materials, 2020, v. 49, n. 10, p. 5782, doi. 10.1007/s11664-020-08357-7
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- Article
Effect of GaAs Substrate Temperature on Indium Droplets Grown by Droplet Epitaxy.
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- Journal of Synthetic Crystals, 2021, v. 50, n. 8, p. 1431
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- Article
Ripening Behavior of Al Droplet on GaAs Surface.
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- Journal of Synthetic Crystals, 2020, v. 49, n. 10, p. 1819
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- Article
The effects of different In components on the physical properties of In<sub>x</sub>Ga<sub>1-x</sub>As.
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- Journal of Functional Materials / Gongneng Cailiao, 2018, v. 49, n. 5, p. 05145, doi. 10.3969/j.issn.1001-9731.2018.05.025
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- Article
Effect of substrate temperature and annealing on InAs quantum dots grown by droplet epitaxy.
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- Journal of Functional Materials / Gongneng Cailiao, 2018, v. 49, n. 3, p. 03203, doi. 10.3969/j.issn.1001-9731.2018.03.035
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- Article
The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation.
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- Crystals (2073-4352), 2020, v. 10, n. 12, p. 1159, doi. 10.3390/cryst10121159
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- Article
The external electric‐field‐induced Schottky‐to‐ohmic contact transition in graphene/As<sub>2</sub>S<sub>3</sub> interface: A study by the first principles.
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- International Journal of Energy Research, 2021, v. 45, n. 3, p. 4727, doi. 10.1002/er.6070
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- Article
A High‐Efficiency Bioorthogonal Tumor‐Membrane Reactor for In Situ Selective and Sustained Prodrug Activation.
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- Angewandte Chemie, 2024, v. 136, n. 10, p. 1, doi. 10.1002/ange.202318372
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- Article
A High‐Efficiency Bioorthogonal Tumor‐Membrane Reactor for In Situ Selective and Sustained Prodrug Activation.
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- Angewandte Chemie International Edition, 2024, v. 63, n. 10, p. 1, doi. 10.1002/anie.202318372
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- Article
Degenerate perturbation theory to quantum search.
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- Quantum Information Processing, 2024, v. 23, n. 4, p. 1, doi. 10.1007/s11128-024-04340-x
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- Article
Impact of the vertical strain on the Schottky barrier height for graphene/AlN heterojunction: a study by the first-principles method.
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- European Physical Journal B: Condensed Matter, 2021, v. 94, n. 1, p. 1, doi. 10.1140/epjb/s10051-020-00010-w
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- Article
Exploration of n- and p-type doping for two-dimensional gallium nitride: charged defect calculation with first principles.
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- European Physical Journal B: Condensed Matter, 2020, v. 93, n. 8, p. N.PAG, doi. 10.1140/epjb/e2020-10166-6
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- Article
Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method.
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- European Physical Journal B: Condensed Matter, 2019, v. 92, n. 7, p. N.PAG, doi. 10.1140/epjb/e2019-100090-5
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- Article
The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 9, p. 1794, doi. 10.3390/nano10091794
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- Article
Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering.
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- Nanomaterials (2079-4991), 2019, v. 9, n. 12, p. 1674, doi. 10.3390/nano9121674
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- Article