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3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices.
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- Physica Status Solidi (B), 2019, v. 256, n. 4, p. N.PAG, doi. 10.1002/pssb.201800477
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- Article
Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900796
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- Article
Phosphor-converted white light from blue-emitting InGaN microrod LEDs.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 6, p. 1577, doi. 10.1002/pssa.201532904
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- Article
Advanced thin-film chip concepts for efficient InGaN solar cells.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 9, p. 2053, doi. 10.1002/pssa.201532064
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- Article
Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization.
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- Physica Status Solidi (B), 2021, v. 258, n. 4, p. 1, doi. 10.1002/pssb.202000464
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- Article
Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2020, v. 257, n. 12, p. 1, doi. 10.1002/pssb.202000278
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- Article
Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization.
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- Physica Status Solidi (B), 2020, v. 257, n. 12, p. 1, doi. 10.1002/pssb.202000242
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- Article
Transparent conductive Ga-doped ZnO films fabricated by MOCVD.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 4, p. 708, doi. 10.1002/pssa.201127324
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- Article
Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 4, p. 836, doi. 10.3390/nano11040836
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- Article
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures.
- Published in:
- Nature Communications, 2020, v. 11, n. 1, p. 1, doi. 10.1038/s41467-020-18914-7
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- Article