Found: 3
Select item for more details and to access through your institution.
Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium.
- Published in:
- Materials (1996-1944), 2021, v. 14, n. 2, p. 354, doi. 10.3390/ma14020354
- By:
- Publication type:
- Article
Polarity identification of GaN bulk single crystals (0001) surface by Auger electron spectroscopy.
- Published in:
- Crystal Research & Technology, 1997, v. 32, n. 2, p. 229, doi. 10.1002/crat.2170320204
- By:
- Publication type:
- Article
Electrical transport phenomena in magnesium-doped p-type GaN.
- Published in:
- Physica Status Solidi (B), 2009, v. 246, n. 3, p. 658, doi. 10.1002/pssb.200880521
- By:
- Publication type:
- Article