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FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design.
- Published in:
- Discover Nano, 2024, p. 1, doi. 10.1186/s11671-024-04096-4
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- Publication type:
- Article
Enhancement noise margin and delay time performance of novel punch-through nMOS for single-carrier CMOS.
- Published in:
- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-04064-y
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- Publication type:
- Article
Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power.
- Published in:
- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-04036-2
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- Publication type:
- Article
Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03904-7
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- Publication type:
- Article
Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03878-6
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- Publication type:
- Article
A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03875-9
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- Publication type:
- Article