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THE PHENOMENOLOGY OF MONEY LAUNDERING IN UKRAINE.
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- Financial & Credit Activity: Problems of Theory & Practice, 2019, v. 2, n. 29, p. 374, doi. 10.18371/fcaptp.v2i29.171949
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Optical absorption spectra and energy levels of Er<sup>3+</sup> ions in KTaO<sub>3</sub> crystals.
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- Technical Physics Letters, 2009, v. 35, n. 6, p. 566, doi. 10.1134/S1063785009060248
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The Absorption Spectra of Gallium Nitride Crystals Doped with Erbium Ions.
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- Technical Physics Letters, 2002, v. 28, n. 4, p. 270, doi. 10.1134/1.1476987
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Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In<sub> x</sub>Ga<sub>1 − x</sub> N/GaN quantum wells.
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- Semiconductors, 2009, v. 43, n. 4, p. 447, doi. 10.1134/S1063782609040083
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Photoluminescence spectra of n-ZnO/ p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures.
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- Semiconductors, 2008, v. 42, n. 7, p. 766, doi. 10.1134/S1063782608070038
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Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities.
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- Semiconductors, 2008, v. 42, n. 2, p. 159, doi. 10.1134/S1063782608020073
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Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals.
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- Semiconductors, 2006, v. 40, n. 12, p. 1378, doi. 10.1134/S1063782606120025
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Impurity Centers of Rare-Earth Ions (Eu, Sm, Er) in GaN Wurtzite Crystals.
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- Semiconductors, 2004, v. 38, n. 11, p. 1267, doi. 10.1134/1.1823057
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Study of the polarization photoluminescence of thick epitaxial GaN layers.
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- Semiconductors, 1999, v. 33, n. 7, p. 716, doi. 10.1134/1.1187767
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Effect of metastable states on the de-excitation of excitons in n-GaAs.
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- Semiconductors, 1998, v. 32, n. 3, p. 277, doi. 10.1134/1.1187379
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