Found: 22
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Vertical field‐effect transistor using c‐axis aligned crystal indium–gallium–zinc oxide on glass substrate and prototype organic light‐emitting diode display.
- Published in:
- Journal of the Society for Information Display, 2024, v. 32, n. 7, p. 501, doi. 10.1002/jsid.1334
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- Publication type:
- Article
Fabrication of 8K4K organic EL panel using high-mobility IGZO material.
- Published in:
- Journal of the Society for Information Display, 2015, v. 23, n. 12, p. 561, doi. 10.1002/jsid.396
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- Publication type:
- Article
A 513-ppi FFS-mode LCD using technique for changing part of active layer of oxide semiconductor to transparent electrode.
- Published in:
- Journal of the Society for Information Display, 2014, v. 22, n. 4, p. 216, doi. 10.1002/jsid.241
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- Publication type:
- Article
Back-channel-etched thin-film transistor using c-axis-aligned crystal In-Ga-Zn oxide.
- Published in:
- Journal of the Society for Information Display, 2014, v. 22, n. 1, p. 55, doi. 10.1002/jsid.211
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- Publication type:
- Article
43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO.
- Published in:
- SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 623, doi. 10.1002/sdtp.16635
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- Publication type:
- Article
9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c‐Axis Aligned Crystalline‐Oxide Semiconductor.
- Published in:
- SID Symposium Digest of Technical Papers, 2022, v. 53, n. 1, p. 78, doi. 10.1002/sdtp.15421
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- Publication type:
- Article
50‐3: Formation of Source and Drain Regions in Top‐Gate Self‐Aligned Oxide Semiconductor Field‐Effect Transistor.
- Published in:
- SID Symposium Digest of Technical Papers, 2018, v. 49, n. 1, p. 660, doi. 10.1002/sdtp.12333
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- Publication type:
- Article
76-2: Field-Effect Transistor with CAAC/CAC-OS Double-Layer Structure for Diversion of Gen 8-10.5 Amorphous Silicon Production Lines.
- Published in:
- SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 1112, doi. 10.1002/sdtp.11829
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- Publication type:
- Article
42-2: Low Power Consumption 8K Liquid Crystal Display with Oxide Semiconductor/Oxide Conductor Pixel (Transparent Pixel).
- Published in:
- SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 596, doi. 10.1002/sdtp.11708
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- Publication type:
- Article
77-4: A 2.78-in 1058-ppi Ultra-High-Resolution OLED Hybrid Display using Oxide Semiconductor/Oxide Conductor (OS/OC) Pixel (Transparent Pixel) achieving High Aperture Ratio.
- Published in:
- SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 1138, doi. 10.1002/sdtp.11842
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- Publication type:
- Article
24-1: Invited Paper: Flexible OLED Display Using C-Axis-Aligned-Crystal/Cloud-Aligned Composite Oxide Semiconductor Technology and Laser Separation Technology.
- Published in:
- SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 329, doi. 10.1002/sdtp.11641
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- Publication type:
- Article
A 1058 ppi 8K4K OLED Display using a Top-Gate Self-Aligned CAAC Oxide Semiconductor FET.
- Published in:
- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1209, doi. 10.1002/sdtp.10832
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- Publication type:
- Article
Development of a Top-Gate Transistor with Short Channel Length and C Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels.
- Published in:
- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1037, doi. 10.1002/sdtp.10920
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- Publication type:
- Article
CAAC-IGZO Technology.
- Published in:
- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1029, doi. 10.1002/sdtp.10904
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- Publication type:
- Article
Fabrication of 5.5-inch 4K2K Liquid Crystal Panel using High-mobility IGZO Material.
- Published in:
- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1656, doi. 10.1002/sdtp.11011
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- Publication type:
- Article
Electrical Characteristics of Dual-Gate CAAC-IGZO FET with Self-Aligned Top Gate.
- Published in:
- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1132, doi. 10.1002/sdtp.10821
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- Publication type:
- Article
P-11: Channel-Etched CAAC-OS FETs using Multi-layer IGZO.
- Published in:
- SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 1158, doi. 10.1002/sdtp.10037
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- Publication type:
- Article
63.3: Fabrication of 8k4k Organic EL Panel using High-Mobility IGZO Material.
- Published in:
- SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 939, doi. 10.1002/sdtp.10415
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- Publication type:
- Article
P-9: Study of the Origin of Major Donor States in Oxide Semiconductor.
- Published in:
- SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 975, doi. 10.1002/j.2168-0159.2014.tb00253.x
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- Publication type:
- Article
33.1: Channel-Etched C-Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring.
- Published in:
- SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 465, doi. 10.1002/j.2168-0159.2014.tb00121.x
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- Publication type:
- Article
56.1: Development of IGZO-TFT and Creation of New Devices Using IGZO-TFT.
- Published in:
- 2013
- By:
- Publication type:
- Other
52.3: Development of Back-channel-etched TFT Using C-Axis Aligned Crystalline In-Ga-Zn-Oxide.
- Published in:
- 2013
- By:
- Publication type:
- Other