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Impact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al<sub>2</sub>O<sub>3</sub>/GaAs MOS capacitor.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 9, p. 1911, doi. 10.1002/pssa.201532184
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- Article