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Light Emission in Nd Doped Si-Rich HfO2 Films Prepared by Magnetron Sputtering.
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- Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3441, doi. 10.1007/s11664-019-07847-7
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- Article
Structural and luminescent characteristics of macro porous silicon.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 226, doi. 10.1007/s10854-007-9550-8
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- Article
The peculiarities of light absorption and light emission in Cu-doped Y-stabilized ZrO<sub>2</sub> nanopowders.
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- Applied Nanoscience, 2019, v. 9, n. 5, p. 965, doi. 10.1007/s13204-018-0839-0
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- Article
The dependence of electrical conductivity of Mg<sub>x</sub>Zn<sub>1-x</sub>O ceramics on phase composition.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 1, p. 70, doi. 10.15407/spqeo27.01.070
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- Article
Role of ZnMn<sub>2</sub>O<sub>4</sub> phase in formation of varistor characteristics in ZnO:Mn ceramics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 255, doi. 10.15407/spqeo26.03.255
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Peculiarities of specular infrared reflection spectra of ZnO-based ceramics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 390, doi. 10.15407/spqeo24.04.390
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- Article
Optical properties of ternary alloys MgZnO in infrared spectrum.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 417, doi. 10.15407/spqeo21.04.417
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Chemical composition and light emission properties of Si-rich-SiO<sub>x</sub> layers prepared by magnetron sputtering.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 21
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The nature of red emission in porous silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 60, doi. 10.15407/spqeo8.01.060
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Structure and luminescence study of nanoporous silicon layers with high internal surface.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 4, p. 492
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- Article
Metastable interstitials in CdSe and CdS crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 4, p. 437
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- Article
Modification of Light Emission in Si-Rich Silicon Nitride Films Versus Stoichiometry and Excitation Light Energy.
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- Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3927, doi. 10.1007/s11664-018-6271-0
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- Article
USXES and Optical Phenomena in Si Low-Dimensional Structures Dependent on Morphology and Silicon Oxide Composition on Si Surface.
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- Surface Review & Letters, 2002, v. 9, n. 2, p. 1047, doi. 10.1142/S0218625X02003329
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- Article
Study of the layer-substrate interface in nc-Si-SiO- p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage.
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- Semiconductors, 2010, v. 44, n. 9, p. 1187, doi. 10.1134/S1063782610090150
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- Article
The nature of emission of porous silicon produced by chemical etching.
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- Semiconductors, 2010, v. 44, n. 1, p. 79, doi. 10.1134/S1063782610010136
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- Article
The interaction of Mn-related centers with the centers of photosensitivity in doped ZnO materials.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 7, p. 1, doi. 10.1007/s10854-023-10042-4
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- Article
Raman scattering, emission and crystalline phase evolutions in Nd-doped Si-rich HfO2:N films.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 13, p. 17473, doi. 10.1007/s10854-021-06280-z
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- Article
The role of excess MgO in the intensity increase of red emission of Mn4+-activated Mg2TiO4 phosphors.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 10, p. 7555, doi. 10.1007/s10854-020-03143-x
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- Article
Effect of plasmon–phonon interaction on the infrared reflection spectra of MgxZn1-xO/Al2O3 structures.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 10, p. 7539, doi. 10.1007/s10854-020-03110-6
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- Article
Annealing impact on emission and phase varying of Nd-doped Si-rich-HfO2 films prepared by RF magnetron sputtering.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 6, p. 4587, doi. 10.1007/s10854-020-03010-9
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- Article
Effect of Li<sup>+</sup> co-doping on structural and luminescence properties of Mn<sup>4+</sup> activated magnesium titanate films.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15613, doi. 10.1007/s10854-018-9153-6
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- Article
Light emitting mechanisms dependent on stoichiometry of Si-rich-SiN films grown by PECVD.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 10, p. 6977, doi. 10.1007/s10854-016-5864-8
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- Article
The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon.
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- Semiconductors, 2006, v. 40, n. 5, p. 598, doi. 10.1134/S1063782606050150
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- Article
The Interrelation of Surface Relief of Porous Silicon with Specific Features of Raman Spectra.
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- Semiconductors, 2002, v. 36, n. 5, p. 558, doi. 10.1134/1.1478548
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- Article
Two sources of excitation of photoluminescence of porous silicon.
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- Semiconductors, 1997, v. 31, n. 8, p. 773, doi. 10.1134/1.1187246
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- Article
Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrO-Based Structures.
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- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-1960-9
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- Article
Impurity-Governed Modification of Optical and Structural Properties of ZrO-Based Composites Doped with Cu and Y.
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- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-1920-4
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- Article