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Formation of silicon nanoclusters in buried ultra-thin oxide layers.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 3, p. 369
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Effect of low-temperature annealing on light-emitting properties of na-Si/SiO<sub>x</sub> porous nanocomposite films.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 127
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- Publication type:
- Article
Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures.
- Published in:
- Semiconductors, 2010, v. 44, n. 4, p. 514, doi. 10.1134/S1063782610040184
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- Article