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Effect of Tungsten Doping on the Properties of Titanium Dioxide Dye-Sensitized Solar Cells.
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- Energies (19961073), 2024, v. 17, n. 20, p. 5118, doi. 10.3390/en17205118
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- Article
Study of the Characteristics of Ba 0.6 Sr 0.4 Ti 1-x Mn x O 3 -Film Resistance Random Access Memory Devices.
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- Micromachines, 2024, v. 15, n. 9, p. 1143, doi. 10.3390/mi15091143
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- Article
Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices.
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- Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2147, doi. 10.1007/s11664-016-5148-3
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- Article
Bipolar Switching Properties of Bilayer V<sub>2</sub>O<sub>5</sub>/Sm<sub>2</sub>O<sub>3</sub> Thin-film Resistive Random Access Memory Device Prepared by Sputtering Technology.
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- Sensors & Materials, 2018, v. 30, n. 4, Part 2, p. 933, doi. 10.18494/SAM.2018.1796
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- Article
Resistive Switching Properties of Samarium Oxide Resistive Random Access Memories.
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- Sensors & Materials, 2018, v. 30, n. 3,Part 1, p. 471, doi. 10.18494/SAM.2018.1766
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- Article
Performance Improvement of LiF/ZnO Codoped Lead-Free Piezoelectric Ceramics.
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- Sensors & Materials, 2017, v. 29, n. 4, p. 411, doi. 10.18494/SAM.2017.1523
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- Article
Hopping conduction properties of the Sn:SiO thin-film resistance random access memory devices induced by rapid temperature annealing procedure.
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- Applied Physics A: Materials Science & Processing, 2015, v. 119, n. 4, p. 1609, doi. 10.1007/s00339-015-9144-x
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- Article
Electrical conduction and bipolar switching properties in transparent vanadium oxide resistive random access memory (RRAM) devices.
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- Applied Physics A: Materials Science & Processing, 2013, v. 110, n. 1, p. 211, doi. 10.1007/s00339-012-7116-y
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- Article
The influence of lanthanum doping on the physical and electrical properties of BTV ferroelectric thin films.
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- Applied Physics A: Materials Science & Processing, 2011, v. 103, n. 4, p. 1173, doi. 10.1007/s00339-010-6070-9
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- Article
Low temperature improvement method on characteristics of Ba(Zr<sub>0.1</sub>Ti<sub>0.9</sub>)O<sub>3</sub> thin films deposited on indium tin oxide/glass substrates.
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- Applied Physics A: Materials Science & Processing, 2010, v. 99, n. 1, p. 291, doi. 10.1007/s00339-009-5523-5
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- Article
Large memory window in the vanadium doped Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> thin films.
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- Applied Physics A: Materials Science & Processing, 2009, v. 97, n. 4, p. 919, doi. 10.1007/s00339-009-5361-5
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- Article
Physical and electrical characteristics of Ba(Zr<sub>0.1</sub>Ti<sub>0.9</sub>)O<sub>3</sub> thin films under oxygen plasma treatment for applications in nonvolatile memory devices.
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- Applied Physics A: Materials Science & Processing, 2008, v. 90, n. 2, p. 329, doi. 10.1007/s00339-007-4277-1
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- Article
Temperature and frequency dependence of the ferroelectric characteristics of BaTiO<sub>3</sub> thin films for nonvolatile memory applications.
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- Applied Physics A: Materials Science & Processing, 2007, v. 89, n. 2, p. 533, doi. 10.1007/s00339-007-4108-4
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- Article
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-52
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- Article
High performance of graphene oxide-doped silicon oxide-based resistance random access memory.
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- Nanoscale Research Letters, 2013, v. 8, n. 1, p. 1, doi. 10.1186/1556-276X-8-497
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- Article
Design a new structure 2.4 GHz/5.2 GHz dual-band bandpass filters on the MgTa<sub>1.5</sub>Nb<sub>0.5</sub>O<sub>6</sub> ceramic.
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- Microwave & Optical Technology Letters, 2009, v. 51, n. 4, p. 1085, doi. 10.1002/mop.24264
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- Article
Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films.
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- Crystals (2073-4352), 2023, v. 13, n. 2, p. 201, doi. 10.3390/cryst13020201
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- Article
Bipolar Switching Properties of GdO x :SiO 2 Thin Film Resistive Random Access Memory Using Co-Sputtering Technology.
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- Crystals (2073-4352), 2023, v. 13, n. 2, p. 156, doi. 10.3390/cryst13020156
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- Article
Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories.
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- Crystals (2073-4352), 2019, v. 9, n. 6, p. 318, doi. 10.3390/cryst9060318
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- Article
Ursolic acid suppresses TGF-ß1-induced quiescent HSC activation and transformation by inhibiting NADPH oxidase expression and Hedgehog signaling.
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- Experimental & Therapeutic Medicine, 2017, v. 14, n. 4, p. 3577, doi. 10.3892/etm.2017.5001
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- Article
Memory and Electrical Properties of (100)-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering.
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- Journal of Nanomaterials, 2014, p. 1, doi. 10.1155/2014/250439
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- Article
Dielectric, Piezoelectric, and Vibration Properties of the LiF-Doped (Ba<sub>0.95</sub>Ca<sub>0.05</sub>)(Ti<sub>0.93</sub>Sn<sub>0.07</sub>)O<sub>3</sub> Lead-Free Piezoceramic Sheets.
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- Materials (1996-1944), 2018, v. 11, n. 2, p. 182, doi. 10.3390/ma11020182
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- Article
Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments.
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- Materials (1996-1944), 2018, v. 11, n. 1, p. 43, doi. 10.3390/ma11010043
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- Article
Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.
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- Materials (1996-1944), 2017, v. 10, n. 12, p. 1415, doi. 10.3390/ma10121415
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- Article
Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films.
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- Materials (1996-1944), 2017, v. 10, n. 11, p. 1327, doi. 10.3390/ma10111327
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- Article
The Long-Term Trends of the Association Between Falls Among the Elderly in Taiwan and their Utilization of Medical Facilities.
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- International Journal of Gerontology, 2017, v. 11, n. 3, p. 161, doi. 10.1016/j.ijge.2016.08.003
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- Article
Illumination Effect on Bipolar Switching Properties of Gd:SiO RRAM Devices Using Transparent Indium Tin Oxide Electrode.
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- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1431-8
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- Article
Improvement of Bipolar Switching Properties of Gd:SiO RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO Treatment.
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- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1272-5
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- Article
Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 19, p. 2685, doi. 10.3390/nano13192685
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- Article
Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO X :SiO 2 Thin Films on Resistive Random Access Memory Devices.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 15, p. 2179, doi. 10.3390/nano13152179
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- Article
Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 4, p. 688, doi. 10.3390/nano13040688
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- Article
First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 1, p. 198, doi. 10.3390/nano13010198
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- Article