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Anomalous Hall Effect and Ferromagnetism in the New Diluted Magnetic Semiconductor Sb<sub>2 – </sub><sub>x</sub>Cr<sub>x</sub>Te<sub>3</sub>.
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- JETP Letters, 2005, v. 81, n. 7, p. 342, doi. 10.1134/1.1944075
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Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.
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- Scientific Reports, 2015, p. 17158, doi. 10.1038/srep17158
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Shubnikov–de Haas Effect and Electrophysical Properties of the Topological Insulator Sb<sub>2 –</sub><sub>x</sub>Cu<sub>x</sub>Te<sub>3</sub>.
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- Journal of Experimental & Theoretical Physics, 2019, v. 128, n. 6, p. 926, doi. 10.1134/S1063776119050121
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Anomalous thermal expansion of InSe layered semiconductors in the low-temperature region.
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- Journal of Experimental & Theoretical Physics, 2013, v. 116, n. 5, p. 872, doi. 10.1134/S1063776113050051
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Electron mobilities in isomorphic InGaAs quantum wells on InP substrates.
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- Journal of Experimental & Theoretical Physics, 2013, v. 116, n. 5, p. 755, doi. 10.1134/S1063776113050063
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Anomalous enhancement of the thermoelectric power in gallium-doped p-(Bi<sub>1 − x</sub>Sb<sub> x</sub>)<sub>2</sub>Te<sub>3</sub> single crystals.
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- Journal of Experimental & Theoretical Physics, 2010, v. 110, n. 4, p. 618, doi. 10.1134/S1063776110040096
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Thermal, transport, and magnetotransport properties of free charge carriers in Mn-doped structures with a GaAs/InGaAs/GaAs quantum well.
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- Journal of Experimental & Theoretical Physics, 2009, v. 109, n. 1, p. 117, doi. 10.1134/S1063776109070152
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Low-temperature transport and ferromagnetism in GaAs-based structures with Mn.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 170, doi. 10.1134/S1063776107070370
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Influence of state hybridization on low-temperature electron transport in shallow quantum wells.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 174, doi. 10.1134/S1063776107070382
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Superconductivity and spectroscopy of heterofullerides Rb<sub>2</sub>MC<sub>60</sub>, K<sub>2</sub>MC<sub>60</sub>, and KM<sub>2</sub>C<sub>60</sub> (M = Mg, Be).
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 250, doi. 10.1134/S1063776107070552
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- Article
Thermoelectric properties and ferromagnetism of diluted magnetic semiconductors Sb<sub>2 − x </sub>Cr<sub> x </sub>Te<sub>3</sub>.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 21, doi. 10.1134/S1063776107070060
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Electronic properties of single-crystal diamonds heavily doped with boron.
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- Journal of Experimental & Theoretical Physics, 2007, v. 104, n. 4, p. 586, doi. 10.1134/S1063776107040097
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- Article
Ferromagnetism in a New Dilute Magnetic Semiconductor Sb<sub>2 – x</sub>Cr<sub>x</sub>Te<sub>3</sub>.
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- Journal of Experimental & Theoretical Physics, 2005, v. 101, n. 3, p. 528, doi. 10.1134/1.2103222
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- Article
Enhancement of Electron Mobility and Photoconductivity in Quantum Well In<sub>0:52</sub>Al<sub>0:48</sub>As/In<sub>0:53</sub>Ga<sub>0:47</sub>As/In<sub>0:52</sub>A10:48As on InP Substrate.
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- Acta Physica Polonica: A, 2013, v. 123, n. 2, p. 345, doi. 10.12693/APhysPolA.123.345
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Superconductivity of Fullerides with Composition AGa $$_{x}$$ C $$_{60}$$ and AGa $$_{x}$$ M $$_{y}$$ C $$_{60}$$ (A = K, Rb; M = In, Sn, Bi).
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- Journal of Low Temperature Physics, 2016, v. 185, n. 5/6, p. 502, doi. 10.1007/s10909-016-1476-1
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Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content.
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- Journal of Low Temperature Physics, 2016, v. 185, n. 5/6, p. 701, doi. 10.1007/s10909-016-1589-6
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Magnetoresistance of ZnO:Co Thin Films at Low Temperatures.
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- Journal of Low Temperature Physics, 2016, v. 185, n. 5/6, p. 707, doi. 10.1007/s10909-016-1596-7
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Vapor-Phase Synthesis and Magnetoresistance of (Cd<sub>0.993</sub>Zn<sub>0.007</sub>)<sub>3</sub>As<sub>2</sub> Single Crystals.
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- JETP Letters, 2019, v. 109, n. 3, p. 175, doi. 10.1134/S0021364019030019
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Magnetoresistance of thin films due to weak localization under the variation of the dimensionality induced by the magnetic field and temperature.
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- JETP Letters, 2015, v. 101, n. 3, p. 189, doi. 10.1134/S0021364015030121
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Anomalous hall effect in a 2D heterostructure including a GaAs/InGaAs/GaAs quantum well with a remote Mn δ-layer.
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- JETP Letters, 2015, v. 100, n. 9, p. 570, doi. 10.1134/S0021364014210127
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Thermoelectric Power and Scattering of Carriers in Bi<sub>2-x</sub>Sn<sub>x</sub>Te<sub>3</sub> with Layered Structure.
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- Physica Status Solidi (B), 1997, v. 199, n. 2, p. 505, doi. 10.1002/1521-3951(199702)199:2<505::AID-PSSB505>3.0.CO;2-9
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Influence of Intercalation by Metallic Atoms on the Shubnikov -de Haas Effect and the Energy Spectrum of Bi<sub>2</sub>Te<sub>3</sub>.
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- Physica Status Solidi (B), 1992, v. 169, n. 1, p. 157, doi. 10.1002/pssb.2221690119
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Free Carrier Scattering in Hg<sub>0.77</sub>Mn<sub>0.23</sub>Se at Low Temperatures.
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- Physica Status Solidi (B), 1991, v. 168, n. 2, p. K103, doi. 10.1002/pssb.2221680238
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Nonlinear Effects in Heterostructures at Low Temperatures in Strong Magnetic Fields.
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- Physica Status Solidi (B), 1991, v. 163, n. 1, p. K15, doi. 10.1002/pssb.2221630135
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Galvanomagnetic Properties of Graphite Fibers.
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- Physica Status Solidi (B), 1989, v. 151, n. 1, p. 185, doi. 10.1002/pssb.2221510122
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Magnetoresistance and Hall Effect in Bi<sub>2</sub>Te<sub>3</sub>〈Sn〉 in Ultrahigh Magnetic Fields and under Pressure.
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- Physica Status Solidi (B), 1988, v. 150, n. 1, p. 237, doi. 10.1002/pssb.2221500126
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Peculiarities of the Localization of Electrons in GaAs-Ga<sub>1−x</sub>Al<sub>x</sub>As Heterostructures.
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- Physica Status Solidi (B), 1988, v. 150, n. 1, p. K25, doi. 10.1002/pssb.2221500142
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Magnetic Freeze-Out and Magnetic-Field-Induced Semiconductor-Semimetal Transition in Bi<sub>1− x</sub>Sb<sub> x</sub> Alloys under High Hydrostatic Pressure.
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- Physica Status Solidi (B), 1988, v. 148, n. 1, p. 333, doi. 10.1002/pssb.2221480131
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The Influence of Compensation on the Hall Effect and Magnetoresistance of n-Hg<sub>0.8</sub>Cd<sub>0.2</sub>Te.
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- Physica Status Solidi (B), 1988, v. 148, n. 1, p. 197, doi. 10.1002/pssb.2221480117
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Effect of thallium doping on the mobility of electrons in BiSe and holes in SbTe.
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- Semiconductors, 2016, v. 50, n. 7, p. 869, doi. 10.1134/S1063782616070113
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- Article
Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic InAlAs/InGaAs/InAlAs structures on GaAs substrates.
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- Semiconductors, 2015, v. 49, n. 7, p. 921, doi. 10.1134/S1063782615070131
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The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped SbTe and BiSe.
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- Semiconductors, 2015, v. 49, n. 6, p. 767, doi. 10.1134/S1063782615060135
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Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an InGaAs quantum well with InAs inserts.
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- Semiconductors, 2015, v. 49, n. 2, p. 199, doi. 10.1134/S1063782615020165
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Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths.
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- Semiconductors, 2013, v. 47, n. 9, p. 1203, doi. 10.1134/S106378261309008X
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Persistent photoconductivity and electron mobility in InAlAs/InGaAs/InAlAs/InP quantum-well structures.
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- Semiconductors, 2013, v. 47, n. 7, p. 935, doi. 10.1134/S1063782613070130
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Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts.
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- Semiconductors, 2012, v. 46, n. 4, p. 484, doi. 10.1134/S1063782612040173
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Anomalously low thermal conductivity and thermoelectric properties of new cationic clathrates in the Sn-In-As-I system.
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- Semiconductors, 2011, v. 45, n. 11, p. 1399, doi. 10.1134/S106378261111025X
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Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density.
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- Semiconductors, 2011, v. 45, n. 10, p. 1321, doi. 10.1134/S1063782611100125
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Thermoelectric properties of bismuth telluride nanocomposites with fullerene.
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- Semiconductors, 2011, v. 45, n. 9, p. 1194, doi. 10.1134/S1063782611090132
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Thermoelectric properties of BiTeI with addition of BiI, CuI, and overstoichiometric Bi.
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- Semiconductors, 2011, v. 45, n. 7, p. 845, doi. 10.1134/S1063782611070128
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Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures.
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- Semiconductors, 2011, v. 45, n. 5, p. 657, doi. 10.1134/S1063782611050162
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Galvanomagnetic and thermoelectric properties of BiTeBr and BiTeI single crystals and their electronic structure.
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- Semiconductors, 2010, v. 44, n. 12, p. 1548, doi. 10.1134/S1063782610120031
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The conductivity and magnetic properties of zinc oxide thin films doped with cobalt.
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- Semiconductors, 2010, v. 44, n. 2, p. 155, doi. 10.1134/S1063782610020053
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- Article
Specific Features of Photoluminescence of InAs/GaAs QD Structures at Different Pumping Levels.
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- Semiconductors, 2005, v. 39, n. 11, p. 1308, doi. 10.1134/1.2128456
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Effect of selenium on the galvanomagnetic properties of the diluted magnetic semiconductor Hg1 _ xMnxTe1 _ ySey
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- Semiconductors, 1998, v. 32, n. 1, p. 49, doi. 10.1134/1.1187367
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Conducting properties of InO:Sn thin films at low temperatures.
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- Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 3, p. 957, doi. 10.1007/s00339-013-7799-8
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- Article
QUANTUM AND TRANSPORT SCATTERING TIMES IN AlGaAs/InGaAs NANOHETEROSTRUCTURES WITH AlAs INSERTS IN THE SPACER LAYER.
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- Lithuanian Journal of Physics, 2015, v. 55, n. 4, p. 249
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Superconductivity, Electron Paramagnetic Resonance, and Raman Scattering Studies of Heterofullerides with Cs and Mg.
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- Advances in Condensed Matter Physics, 2008, p. 1, doi. 10.1155/2008/941372
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Thermoelectric Properties of Sb<sub>2</sub>Te<sub>3</sub>-Based Nanocomposites with Graphite.
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- Semiconductors, 2019, v. 53, n. 5, p. 638, doi. 10.1134/S1063782619050129
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- Article