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Normally-off GaN MIS-HEMT using a combination of recessed-gate structure and CF<sub>4</sub> plasma treatment.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1170, doi. 10.1002/pssa.201431737
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- Article
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 14, p. 1164, doi. 10.1049/el.2014.1747
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- Article
Efficiency improvement of a DC/DC converter using LTCC substrate.
- Published in:
- ETRI Journal, 2019, v. 41, n. 6, p. 811, doi. 10.4218/etrij.2018-0551
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- Article
Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss.
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- ETRI Journal, 2017, v. 39, n. 6, p. 866, doi. 10.4218/etrij.17.0117.0113
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- Article