Found: 12
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Area-Efficient Embedded Resistor-Triggered SCR with High ESD Robustness.
- Published in:
- Electronics (2079-9292), 2019, v. 8, n. 4, p. 445, doi. 10.3390/electronics8040445
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- Article
Simulation and optimization of high holding current SCR devices based on MEDICI software.
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- Experimental Technology & Management, 2023, v. 40, n. 12, p. 99, doi. 10.16791/j.cnki.sjg.2023.12.014
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- Article
Improved LDMOS-SCR for high-voltage electrostatic discharge (ESD) protection applications.
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- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 13, p. 680, doi. 10.1049/el.2020.0748
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- Article
Improved LDMOS‐SCR for high‐voltage electrostatic discharge (ESD) protection applications.
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- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 12, p. 680, doi. 10.1049/el.2020.0748
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- Article
Vertical bipolar junction transistor triggered silicon-controlled rectifier for nanoscale ESD engineering.
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- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 7, p. 350, doi. 10.1049/el.2019.3864
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- Article
Vertical bipolar junction transistor triggered silicon‐controlled rectifier for nanoscale ESD engineering.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 5, p. 350, doi. 10.1049/el.2019.3864
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- Article
Bidirectional silicon-controlled rectifier for advanced ESD protection applications.
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- Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 2, p. 112, doi. 10.1049/el.2018.6686
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- Publication type:
- Article
Bidirectional silicon‐controlled rectifier for advanced ESD protection applications.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 2, p. 112, doi. 10.1049/el.2018.6686
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- Publication type:
- Article
High holding voltage SCRs with segmented layout for high-robust ESD protection.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 18, p. 1274, doi. 10.1049/el.2017.2390
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- Article
High holding voltage SCRs with segmented layout for high‐robust ESD protection.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 17, p. 1274, doi. 10.1049/el.2017.2390
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- Article
Reference voltage generation scheme enhancing speed and reliability for 1T1C-type FRAM.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 3, p. 1, doi. 10.1049/el.2013.3193
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- Publication type:
- Article
Reference voltage generation scheme enhancing speed and reliability for 1T1C‐type FRAM.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 1, p. 154, doi. 10.1049/el.2013.3193
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- Publication type:
- Article