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A 26–30 GHz GaN HEMT Low-Noise Amplifier Employing a Series Inductor-Based Stability Enhancement Technique.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 17, p. 2716, doi. 10.3390/electronics11172716
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- Article
X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2024, v. 60, n. 10, p. 1, doi. 10.1049/ell2.13221
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- Article