Found: 10
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P‐62: Fast Response LCD under Low Temperature Environments Using In‐cell Heater Wires.
- Published in:
- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 1627, doi. 10.1002/sdtp.17875
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- Article
46‐1: 1218 ppi Quest 3 Display by Hybrid Backplane with Highly Reliable IGZO TFTs.
- Published in:
- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 615, doi. 10.1002/sdtp.17599
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- Article
20‐1: Distinguished Paper: Advanced Hybrid Process with Back Contact IGZO‐TFT.
- Published in:
- SID Symposium Digest of Technical Papers, 2022, v. 53, n. 1, p. 214, doi. 10.1002/sdtp.15456
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- Article
7‐1: Distinguished Paper: Reliability Improvement of IGZO‐TFT in Hybrid Process with LTPS.
- Published in:
- SID Symposium Digest of Technical Papers, 2021, v. 52, n. 1, p. 57, doi. 10.1002/sdtp.14609
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- Article
24‐1: Invited Paper: Development of High Quality IGZO‐TFT with Same On‐Current as LTPS.
- Published in:
- SID Symposium Digest of Technical Papers, 2020, v. 51, n. 1, p. 343, doi. 10.1002/sdtp.13874
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- Article
24‐4: Distinguished Paper: High Refresh Rate and Low Power Consumption AMOLED Panel Using Top‐gate n‐Oxide and p‐LTPS TFTs.
- Published in:
- SID Symposium Digest of Technical Papers, 2020, v. 51, n. 1, p. 355, doi. 10.1002/sdtp.13877
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- Article
37‐2: Development of high mobility top gate IGZO‐TFT for OLED display.
- Published in:
- SID Symposium Digest of Technical Papers, 2019, v. 50, n. 1, p. 516, doi. 10.1002/sdtp.12970
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- Article
Advanced hybrid process with back contact IGZO‐TFT.
- Published in:
- Journal of the Society for Information Display, 2022, v. 30, n. 5, p. 471, doi. 10.1002/jsid.1131
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- Publication type:
- Article
Reliability improvement of IGZO‐TFT in hybrid process with LTPS.
- Published in:
- Journal of the Society for Information Display, 2021, v. 29, n. 5, p. 416, doi. 10.1002/jsid.1032
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- Publication type:
- Article
High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs.
- Published in:
- Journal of the Society for Information Display, 2020, v. 28, n. 4, p. 350, doi. 10.1002/jsid.888
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- Publication type:
- Article