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Amplification of photoelectric injection in the photodiode based on large-grain cadmium telluride films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 157, doi. 10.15407/spqeo25.02.157
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- Article
Thermal stability of electrical parameters of silicon crystal doped with nickel during growth.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 1, p. 006, doi. 10.15407/spqeo25.01.006
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- Article
Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 255, doi. 10.15407/spqeo24.03.255
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- Article
Effect of the diffusion temperature on interaction of clusters with impurity atoms in silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 1, p. 22, doi. 10.15407/spqeo24.01.022
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- Article
Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 4, p. 361, doi. 10.15407/spqeo23.04.361
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- Article
Effect of ultrasound irradiation on the electro-physical properties of the structure of Al–Al<sub>2</sub>O<sub>3</sub>–CdTe.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 2, p. 165, doi. 10.15407/spqeo22.02.165
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- Article
Clusters of nickel atoms and controlling their state in silicon lattice.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 392, doi. 10.15407/spqeo21.04.392
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- Article
Effect of pressure on the properties of Al-SiO<sub>2</sub>-n-Si[Ni] structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 2, p. 166
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- Article
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 363, doi. 10.15407/spqeo13.04.363
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- Article
Variation-of-Weight Method for Optimizing the Single and Group Diagnostics of Articles and Physical Media.
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- Russian Journal of Nondestructive Testing, 2018, v. 54, n. 7, p. 534, doi. 10.1134/S1061830918070045
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- Article
Making aerosol measurements using small satellite formation flying.
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- Cosmic Research, 2013, v. 51, n. 5, p. 396, doi. 10.1134/S0010952513050067
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- Article
Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation.
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- Technical Physics Letters, 2011, v. 37, n. 8, p. 693, doi. 10.1134/S106378501108013X
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- Article
Optical properties of (Ge<sub>2</sub>)<sub>1− x </sub>(InP)<sub>x</sub> solid solutions.
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- Technical Physics Letters, 2006, v. 32, n. 6, p. 538, doi. 10.1134/S1063785006060277
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- Article
Growth of perfect-crystal Si–Si[sub 1-x]Ge[sub x]–(Ge[sub 2])[sub 1-x](InP)[sub x] structures from the liquid phase.
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- Technical Physics Letters, 1999, v. 25, n. 12, p. 986, doi. 10.1134/1.1262702
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INVESTIGATION OF (p,xp) AND (p,xα) REACTIONS OF 30-MeV PROTONS WITH THE 103Rh NUCLEUS.
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- Acta Physica Polonica B, 2020, v. 51, n. 3, p. 783, doi. 10.5506/APhysPolB.51.783
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Silicon diffused diodes with nearly ideal current–voltage characteristics.
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- Technical Physics, 1998, v. 43, n. 10, p. 1257, doi. 10.1134/1.1259167
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- Article
A new proton spectra for natCu(p,xp) reaction at Ep= 7 and 30 MeV.
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- European Physical Journal A -- Hadrons & Nuclei, 2022, v. 58, n. 5, p. 1, doi. 10.1140/epja/s10050-022-00740-8
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- Article
Physical mechanisms of gettering properties of nickel clusters in silicon solar cells.
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- Physical Sciences & Technology, 2024, v. 11, n. 1/2, p. 13, doi. 10.26577/phst2024v11i1a2
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- Article
Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon.
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- Physical Sciences & Technology, 2023, v. 10, n. 1, p. 13, doi. 10.26577/phst.2023.v10.i1.02
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- Article
Luminescent Associates of Pb<sup>2+</sup>v<sub>c</sub><sup>−</sup> Dipoles with Interstitial Iodine Atoms in KI:PbI<sub>2</sub> Crystals.
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- Physica Status Solidi (B), 1991, v. 163, n. 1, p. 183, doi. 10.1002/pssb.2221630118
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Composition of Silicon Alloyed with Gallium and Phosphorus Atoms.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2024, v. 18, n. 1, p. 69, doi. 10.1134/S102745102401021X
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Questions related to measurement of the components of the vegetation-cloud cover system in the area around airports.
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- Measurement Techniques, 2012, v. 55, n. 4, p. 421, doi. 10.1007/s11018-012-9975-1
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- Article
Interaction of multiply charged manganese nanoclusters with selenium and tellurium atoms in silicon.
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- Inorganic Materials, 2015, v. 51, n. 8, p. 767, doi. 10.1134/S0020168515070031
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Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon.
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- Inorganic Materials, 2012, v. 48, n. 4, p. 325, doi. 10.1134/S0020168512030144
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- Article