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Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe<sub>2</sub> via Ab initio modelling of interfaces.
- Published in:
- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-98080-y
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- Article
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors.
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- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00471-y
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- Article
Vertical Heterostructures between Transition‐Metal Dichalcogenides—A Theoretical Analysis of the NbS2/WSe2 Junction.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200020
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- Article
Electronic Transport in 2D‐Based Printed FETs from a Multiscale Perspective (Adv. Electron. Mater. 5/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100972
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- Article
Electronic Transport in 2D‐Based Printed FETs from a Multiscale Perspective.
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- Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100972
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- Article
1/f Noise Characterization of Bilayer MoS<sub>2</sub> Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100283
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- Article
Load Modulation Feedback in Adaptive Matching Networks for Low-Coupling Wireless Power Transfer Systems.
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- Electronics (2079-9292), 2023, v. 12, n. 22, p. 4619, doi. 10.3390/electronics12224619
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- Article
Vertical transport in graphene-hexagonal boron nitride heterostructure devices.
- Published in:
- Scientific Reports, 2015, p. 14519, doi. 10.1038/srep14519
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- Article
Phonon-assisted carrier transport through a lattice-mismatched interface.
- Published in:
- NPG Asia Materials, 2019, v. 11, n. 1, p. N.PAG, doi. 10.1038/s41427-019-0113-2
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- Article
Erratum: Electronics based on two-dimensional materials.
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- Nature Nanotechnology, 2014, v. 9, n. 12, p. 1063, doi. 10.1038/nnano.2014.283
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- Article
Electronics based on two-dimensional materials.
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- Nature Nanotechnology, 2014, v. 9, n. 10, p. 768, doi. 10.1038/nnano.2014.207
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- Article
Inkjet-printed low-dimensional materials-based complementary electronic circuits on paper.
- Published in:
- NPJ 2D Materials & Applications, 2021, v. 5, n. 1, p. 1, doi. 10.1038/s41699-021-00266-5
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- Publication type:
- Article
Theoretical Analysis of a 2D Metallic/Semiconducting Transition‐Metal Dichalcogenide NbS<sub>2</sub>//WSe<sub>2</sub> Hybrid Interface.
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- 2021
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- Correction Notice
Theoretical Analysis of a 2D Metallic/Semiconducting Transition‐Metal Dichalcogenide NbS<sub>2</sub>//WSe<sub>2</sub> Hybrid Interface.
- Published in:
- Advanced Theory & Simulations, 2020, v. 3, n. 12, p. 1, doi. 10.1002/adts.202000164
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- Article
Performance of arsenene and antimonene double-gate MOSFETs from first principles.
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- Nature Communications, 2016, v. 7, n. 8, p. 12585, doi. 10.1038/ncomms12585
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- Article
Reconfigurable Diodes Based on Vertical WSe<sub>2</sub> Transistors with van der Waals Bonded Contacts.
- Published in:
- Advanced Materials, 2018, v. 30, n. 18, p. 1, doi. 10.1002/adma.201707200
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- Article
Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering.
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- Advanced Materials Interfaces, 2019, v. 6, n. 1, p. N.PAG, doi. 10.1002/admi.201801285
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- Article
Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS<sub>2</sub>: Experimental and Theoretical Investigation.
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- Advanced Materials Interfaces, 2017, v. 4, n. 17, p. n/a, doi. 10.1002/admi.201700031
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- Publication type:
- Article
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices.
- Published in:
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep06607
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- Article
A portable class of 3‐transistor current references with low‐power sub‐0.5 V operation.
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- International Journal of Circuit Theory & Applications, 2018, v. 46, n. 4, p. 779, doi. 10.1002/cta.2439
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- Article
Low energy/delay overhead level shifter for wide-range voltage conversion.
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- International Journal of Circuit Theory & Applications, 2017, v. 45, n. 11, p. 1637, doi. 10.1002/cta.2294
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- Publication type:
- Article
A sub-1 V nanopower temperature-compensated sub-threshold CMOS voltage reference with 0.065%/V line sensitivity.
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- International Journal of Circuit Theory & Applications, 2015, v. 43, n. 4, p. 421, doi. 10.1002/cta.1950
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- Article
A picopower temperature-compensated, subthreshold CMOS voltage reference.
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- International Journal of Circuit Theory & Applications, 2014, v. 42, n. 12, p. 1306, doi. 10.1002/cta.1925
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- Article
Design of a 75-nW, 0.5-V subthreshold complementary metal-oxide-semiconductor operational amplifier.
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- International Journal of Circuit Theory & Applications, 2014, v. 42, n. 9, p. 967, doi. 10.1002/cta.1898
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- Article
Substitutional p‐Type Doping in NbS<sub>2</sub>–MoS<sub>2</sub> Lateral Heterostructures Grown by MOCVD.
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- Advanced Materials, 2023, v. 35, n. 14, p. 1, doi. 10.1002/adma.202209371
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- Publication type:
- Article
Substitutional p‐Type Doping in NbS<sub>2</sub>–MoS<sub>2</sub> Lateral Heterostructures Grown by MOCVD.
- Published in:
- Advanced Materials, 2023, v. 35, n. 14, p. 1, doi. 10.1002/adma.202209371
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- Article
High‐Performance 2D p‐Type Transistors Based on GaSe Layers: An Ab Initio Study.
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- Advanced Electronic Materials, 2017, v. 3, n. 2, p. 1, doi. 10.1002/aelm.201600399
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- Publication type:
- Article
Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper.
- Published in:
- Nature Communications, 2020, v. 11, n. 1, p. 1, doi. 10.1038/s41467-020-17297-z
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- Publication type:
- Article