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Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy.
- Published in:
- Scientific Reports, 2016, p. 21482, doi. 10.1038/srep21482
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- Article
Optical intersubband transitions in strained quantum wells utilizing In[sub 1-x]Ga[sub x]As/InP solid solutions.
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- Semiconductors, 1999, v. 33, n. 1, p. 72, doi. 10.1134/1.1187650
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- Article
Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation.
- Published in:
- Physica Status Solidi (B), 2017, v. 254, n. 2, p. n/a, doi. 10.1002/pssb.201600566
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- Article
Time resolved photoluminescence study of Si modulation doped GaN/Al<sub>0.07</sub>Ga<sub>0.93</sub>N multiple quantum wells.
- Published in:
- Physica Status Solidi (B), 2004, v. 241, n. 5, p. 1124, doi. 10.1002/pssb.200301973
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- Article
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures.
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- Physica Status Solidi (B), 2003, v. 237, n. 1, p. 353, doi. 10.1002/pssb.200301782
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- Article