Found: 10
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Effect of magnetic and electric fields on optical properties of semiconductor spherical layer.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 7
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- Article
Oscillator Strengths of Quantum Transitions in Spherical Quantum Dot GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As/GaAs/Al<sub>x</sub>Ga1-x As with On-Center Donor Impurity.
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- Acta Physica Polonica: A, 2014, v. 125, n. 1, p. 93, doi. 10.12693/APhysPolA.125.93
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- Article
ENERGIES AND WAVE FUNCTIONS OF THE ELECTRON IN THE CdS/SiO<sub>2</sub> SPHERICAL QUANTUM DOT WITH ONE AND TWO HYDROGENIC IMPURITIES.
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- Journal of Physical Studies, 2012, v. 16, n. 1/2, p. 1, doi. 10.30970/jps.16.1706
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- Article
ONFINED AND INTERFACE OPTICAL PHONONS IN THE SEMICONDUCTOR ELLIPTIC QUANTUM WIRE WITH THE AXIAL HETEROSTRUCTURE.
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- Journal of Physical Studies, 2011, v. 15, n. 2, p. 2601:1, doi. 10.30970/jps.15.2601
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- Article
Optical properties of GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As/GaAs quantum dot with off-central impurity driven by electric field.
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- Condensed Matter Physics, 2018, v. 21, n. 1, p. 1, doi. 10.5488/CMP.21.13703
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- Article
Effect of magnetic field on electron spectrum in spherical nano-structures.
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- Condensed Matter Physics, 2014, v. 17, n. 1, p. 1, doi. 10.5488/CMP.17.13702
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- Article
Electron-Phonon Interaction in Semiconductor Spherical Quantum Dot Embedded in a Semiconductor Medium (HgS/CdS).
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- Physica Status Solidi (B), 2001, v. 225, n. 2, p. 331, doi. 10.1002/1521-3951(200106)225:2<331::AID-PSSB331>3.0.CO;2-6
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- Article
Exciton-Phonon Interaction in the Spherical Nanoheterosystem CdS/β-HgS/H<sub>2</sub>O.
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- Physica Status Solidi (B), 1997, v. 203, n. 2, p. 373, doi. 10.1002/1521-3951(199710)203:2<373::AID-PSSB373>3.0.CO;2-S
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- Article
Spectrum of an Electron Localized by Electrostatic Image Forces in Thin Semiconductor Layers.
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- Physica Status Solidi (B), 1994, v. 182, n. 1, p. 69, doi. 10.1002/pssb.2221820107
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- Article
On the Spectra of Electrons and Holes in an Open Spherical Nanoheterostructure (through the Example of GaAs/Al[sub x]Ga[sub 1 – ][sub x]As/GaAs).
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- Semiconductors, 2000, v. 34, n. 5, p. 583, doi. 10.1134/1.1188032
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- Article