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Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films.
- Published in:
- Advanced Engineering Materials, 2023, v. 25, n. 4, p. 1, doi. 10.1002/adem.202201124
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- Article
A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 7, p. 1, doi. 10.1002/pssa.202300067
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- Article
Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility.
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- Advanced Intelligent Systems (2640-4567), 2024, v. 6, n. 4, p. 1, doi. 10.1002/aisy.202300461
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- Article
Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films.
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- Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100837
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- Article
Piezoelectric Response of Polycrystalline Silicon‐Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles.
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- Advanced Electronic Materials, 2020, v. 6, n. 3, p. 1, doi. 10.1002/aelm.201901015
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- Article
Bistable organic electrochemical transistors: enthalpy vs. entropy.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-51001-9
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- Article