Found: 17
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Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 407, doi. 10.15407/spqeo24.04.407
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- Article
Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate.
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- JETP Letters, 2011, v. 93, n. 1, p. 10, doi. 10.1134/S0021364011010103
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- Article
Distortions of the coulomb blockade conductance line in scanning gate measurements of inas nanowire based quantum dots.
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- Journal of Experimental & Theoretical Physics, 2013, v. 116, n. 1, p. 138, doi. 10.1134/S1063776112130195
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- Article
Negative differential conductance in InAs wire based double quantum dot induced by a charged AFM tip.
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- Journal of Experimental & Theoretical Physics, 2012, v. 115, n. 6, p. 1062, doi. 10.1134/S1063776112110131
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- Article
Alkalimanganselenide und -telluride A<sub>2</sub>Mn<sub>3</sub>X<sub>4</sub> - Synthese, Kristall- und Spinstruktur.
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- Zeitschrift für Anorganische und Allgemeine Chemie, 1996, v. 622, n. 2, p. 313, doi. 10.1002/zaac.19966220218
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- Article
Darstellung, Struktur und magnetische Eigenschaften der Natriumeisenchalkogenide Na<sub>6</sub>FeS<sub>4</sub> und Na<sub>6</sub>FeSe<sub>4</sub>.
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- Zeitschrift für Anorganische und Allgemeine Chemie, 1992, v. 616, n. 10, p. 14, doi. 10.1002/zaac.19926161003
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- Article
Darstellung, Struktur und magnetisches Verhalten von Alkali-metallmanganchalkogeniden A<sub>6</sub>MnX<sub>4</sub> mit A Na oder K und X S, Se oder Te.
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- Zeitschrift für Anorganische und Allgemeine Chemie, 1989, v. 574, n. 1, p. 89, doi. 10.1002/zaac.655740109
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Über Alkalimetallmanganchalkogenide A<sub>2</sub>MnX<sub>2</sub> mit A K, Rb oder Cs und X S, Se oder Te.
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- Zeitschrift für Anorganische und Allgemeine Chemie, 1989, v. 574, n. 1, p. 99, doi. 10.1002/zaac.655740110
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- Article
Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy.
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- Crystals (2073-4352), 2023, v. 13, n. 8, p. 1267, doi. 10.3390/cryst13081267
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- Article
Electric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime.
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- Fluctuation & Noise Letters, 2017, v. 16, n. 1, p. -1, doi. 10.1142/S0219477517500109
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- Article
Correlations of the mutual positions of the nodes of charge density waves in side-by-side placed InAs wires measured with scanning gate microscopy.
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- JETP Letters, 2015, v. 101, n. 9, p. 628, doi. 10.1134/S0021364015090143
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- Article
Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at liquid helium temperatures.
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- JETP Letters, 2014, v. 100, n. 1, p. 32, doi. 10.1134/S0021364014130128
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- Article
Direct observation of standing electron waves in diffusively conducting inas nanowire.
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- JETP Letters, 2012, v. 96, n. 2, p. 109, doi. 10.1134/S0021364012140159
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- Article
Improved gate-control in InAs nanowire structures by the use of GdScO<sub>3</sub> as a gate dielectric.
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- Applied Physics A: Materials Science & Processing, 2010, v. 100, n. 1, p. 305, doi. 10.1007/s00339-010-5804-z
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- Article
New approaches for growth control of GaN-based HEMT structures.
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- Applied Physics A: Materials Science & Processing, 2007, v. 87, n. 3, p. 491, doi. 10.1007/s00339-007-3933-9
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- Article
Rashba effect in Ga<sub>x</sub>In<sub>1-x</sub>As/InP quantum wire structures.
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- Applied Physics A: Materials Science & Processing, 2007, v. 87, n. 3, p. 577, doi. 10.1007/s00339-007-3899-7
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- Article
Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides.
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- Physica Status Solidi (B), 2005, v. 242, n. 13, p. 2581, doi. 10.1002/pssb.200541099
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- Article