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Graphene/Hexagonal Boron Nitride Composite Nanoparticles for 2D Printing Technologies.
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- Advanced Engineering Materials, 2022, v. 24, n. 3, p. 1, doi. 10.1002/adem.202100917
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- Article
Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions.
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- JETP Letters, 2010, v. 92, n. 6, p. 388, doi. 10.1134/S0021364010180062
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- Article
Observation of Antiphase Domains in Cd<sub>x</sub>Hg<sub>1 – </sub><sub>x</sub>Te Films on Silicon by the Phase Contrast Method in Atomic Force Microscopy.
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- JETP Letters, 2005, v. 82, n. 5, p. 292, doi. 10.1134/1.2130915
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Optical phonons in nanosize GaAs and AlAs clusters in an InAs matrix.
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- JETP Letters, 1999, v. 70, n. 7, p. 469
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- Article
Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi<sub>2</sub> nanocrystallites.
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- Scientific Reports, 2015, p. 1, doi. 10.1038/srep14795
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- Article
Experimental observation of motion of edge dislocations in Ge/GeSi/Si(001) ( x = 0.2-0.6) heterostructures.
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- Journal of Experimental & Theoretical Physics, 2016, v. 123, n. 5, p. 832, doi. 10.1134/S1063776116110042
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- Article
Interface Phonons in Semiconductor Nanostructures with Quantum Dots.
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- Journal of Experimental & Theoretical Physics, 2005, v. 101, n. 3, p. 554, doi. 10.1134/1.2103225
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Magnetic field-induced dissipation-free state in superconducting nanostructures.
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- Nature Communications, 2013, v. 4, n. 2, p. 1437, doi. 10.1038/ncomms2437
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- Article
Hemozoin "knobs" in Opisthorchis felineus infected liver.
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- Parasites & Vectors, 2015, v. 8, n. 1, p. 1, doi. 10.1186/s13071-015-1061-5
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- Article
Nanocrystalline Silicon Films Formed under the Impact of Pulsed Excimer Laser Radiation on Polyimide Substrates.
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- Technical Physics Letters, 2003, v. 29, n. 7, p. 569, doi. 10.1134/1.1598552
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- Article
Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide–germanium–gallium-arsenide(001) system.
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- Technical Physics Letters, 1998, v. 24, n. 12, p. 949, doi. 10.1134/1.1262328
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- Article
Ion-Beam Synthesis of Structure-Oriented Iron Nanoparticles in Single-Crystalline Rutile TiO 2.
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- Crystals (2073-4352), 2023, v. 13, n. 2, p. 355, doi. 10.3390/cryst13020355
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- Article
Photoluminescence associated with {113} defects in oxygen-implanted silicon.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 7, p. n/a, doi. 10.1002/pssa.201700317
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- Article
Influence of shape of GaN/AlN quantum dots on luminescence decay law.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 4, p. 653, doi. 10.1002/pssa.201100649
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Inclined misfit dislocations in a film/substrate system.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 8, p. 1896, doi. 10.1002/pssa.201127018
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- Article
Silicon p+–p−–n Diodes with Embedded β-FeSi<sub>2</sub> and CrSi<sub>2</sub> Nanocrystals: Morphology, Crystal Structure and Photoelectric Properties.
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- International Journal of Nanoscience, 2019, v. 18, n. 3/4, p. N.PAG, doi. 10.1142/S0219581X19400842
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- Article
MODIFICATION OF GROWTH MODE OF Ge ON Si BY PULSED LOW-ENERGY ION-BEAM IRRADIATION.
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- International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 19, doi. 10.1142/S0219581X04001778
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- Article
Resistive Switching Effect with ON/OFF Current Relation up to 10<sup>9</sup> in 2D Printed Composite Films of Fluorinated Graphene with V<sub>2</sub>O<sub>5</sub> Nanoparticles.
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- Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201900310
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MBE-grown InSb photodetector arrays.
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- Technical Physics, 2017, v. 62, n. 6, p. 915, doi. 10.1134/S1063784217060044
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Preparation of Monolayers of Nanoparticles for Transmission Electron Microscopy.
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- Technical Physics, 2000, v. 45, n. 6, p. 783
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Effect of synthesis conditions on the structure and properties of new SiC<sub><italic>x</italic></sub>N<sub><italic>y</italic></sub>M<sub><italic>z</italic></sub> materials for spintronics.
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- Journal of Structural Chemistry, 2017, v. 58, n. 8, p. 1493, doi. 10.1134/S0022476617080030
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Preparation of thin films of platinum group metals by pulsed MOCVD. II. Deposition of Ru layers.
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- Journal of Structural Chemistry, 2012, v. 53, n. 4, p. 725, doi. 10.1134/S0022476612040154
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Preparation of thin films of platinum group metals by pulsed MOCVD. I. Deposition of Ir layers.
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- Journal of Structural Chemistry, 2012, v. 53, n. 4, p. 715, doi. 10.1134/S0022476612040142
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Extended Defects in O+-Implanted Si Layers and Their Luminescence.
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- Crystallography Reports, 2021, v. 66, n. 4, p. 625, doi. 10.1134/S1063774521040210
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Structural Transformations of the Dislocation Cores in Si and Their Relationship with Photoluminescence.
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- Crystallography Reports, 2021, v. 66, n. 4, p. 636, doi. 10.1134/S1063774521040064
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Specific Features of the Atomic Structure of Iron Silicide Nanocrystals in a Silicon Matrix.
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- Crystallography Reports, 2021, v. 66, n. 4, p. 601, doi. 10.1134/S1063774521040088
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Peculiarities of structure, morphology, and electrochemistry of the doped 5-V spinel cathode materials LiNiMnMO (M = Co, Cr, Ti; x+ y = 0.05) prepared by mechanochemical way.
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- Journal of Solid State Electrochemistry, 2016, v. 20, n. 1, p. 235, doi. 10.1007/s10008-015-3015-4
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LiVPOF/LiV(PO) nanostructured composite cathode materials prepared via mechanochemical way.
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- Journal of Solid State Electrochemistry, 2014, v. 18, n. 5, p. 1389, doi. 10.1007/s10008-013-2213-1
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- Article
In Situ HREM Irradiation Study of an Intrinsic Point Defects Clustering in FZ-Si.
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- Crystal Research & Technology, 2000, v. 35, n. 6/7, p. 775, doi. 10.1002/1521-4079(200007)35:6/7<775::AID-CRAT775>3.0.CO;2-3
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- Article
Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF<sub>2</sub> Dielectric Matrix.
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- JETP Letters, 2022, v. 116, n. 9, p. 628, doi. 10.1134/S0021364022602159
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- Article
Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots.
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- JETP Letters, 2019, v. 109, n. 4, p. 270, doi. 10.1134/S0021364019040143
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Structure of Hf<sub>0.9</sub>La<sub>0.1</sub>O<sub>2</sub> Ferroelectric Films Obtained by the Atomic Layer Deposition.
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- JETP Letters, 2019, v. 109, n. 2, p. 116, doi. 10.1134/S0021364019020115
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Strain in Ultrathin SiGeSn Layers in a Silicon Matrix.
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- JETP Letters, 2017, v. 106, n. 12, p. 780, doi. 10.1134/S0021364017240092
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Nature of luminescence of PbS quantum dots synthesized in a Langmuir-Blodgett matrix.
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- JETP Letters, 2017, v. 106, n. 1, p. 18, doi. 10.1134/S0021364017130082
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Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures.
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- JETP Letters, 2016, v. 103, n. 11, p. 692, doi. 10.1134/S0021364016110023
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Coexistence of type-I and type-II band alignment in Ga(Sb, P)/GaP heterostructures with pseudomorphic self-assembled quantum dots.
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- JETP Letters, 2014, v. 99, n. 2, p. 76, doi. 10.1134/S0021364014020027
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Novel self-assembled quantum dots in the GaSb/AlAs heterosystem.
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- JETP Letters, 2012, v. 95, n. 10, p. 534, doi. 10.1134/S0021364012100104
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Analysis of the dislocation structure at the Ge/Si(111) heterointerface.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2014, v. 8, n. 4, p. 787, doi. 10.1134/S1027451014030069
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- Article
Bimetallic Pt,Ir-containing coatings formed by MOCVD for medical applications.
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- Journal of Materials Science: Materials in Medicine, 2019, v. 30, n. 6, p. N.PAG, doi. 10.1007/s10856-019-6275-1
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- Article
The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation.
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- Microscopy & Microanalysis, 2013, v. 19, n. S5, p. 38, doi. 10.1017/S1431927613012294
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Factors determining the morphology of Cd<sub> x </sub>Hg<sub>1− x </sub>Te films in the course of molecular beam epitaxy.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2008, v. 2, n. 1, p. 120, doi. 10.1007/s11700-008-1018-9
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Morphological transformations of vanadium oxide films during low-temperature reduction in hydrogen electron cyclotron resonance plasma.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2007, v. 1, n. 4, p. 454, doi. 10.1134/S1027451007040167
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- Article
Formation of low-dimensional structures in the InSb/AlAs heterosystem.
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- Semiconductors, 2017, v. 51, n. 9, p. 1233, doi. 10.1134/S1063782617090020
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- Article
Strained multilayer structures with pseudomorphic GeSiSn layers.
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- Semiconductors, 2016, v. 50, n. 12, p. 1584, doi. 10.1134/S106378261612023X
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Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation.
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- Semiconductors, 2015, v. 49, n. 6, p. 749, doi. 10.1134/S1063782615060238
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- Article
New system of self-assembled GaSb/GaP quantum dots.
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- Semiconductors, 2012, v. 46, n. 12, p. 1534, doi. 10.1134/S1063782612120020
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- Article
Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen.
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- Semiconductors, 2009, v. 43, n. 9, p. 1235, doi. 10.1134/S1063782609090243
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Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals.
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- Semiconductors, 2008, v. 42, n. 9, p. 1127, doi. 10.1134/S1063782608090224
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Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition.
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- Semiconductors, 2008, v. 42, n. 1, p. 1, doi. 10.1134/S1063782608010016
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Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant.
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- Semiconductors, 2007, v. 41, n. 10, p. 1234, doi. 10.1134/S106378260710020X
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- Article