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Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors.
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- Micromachines, 2023, v. 14, n. 2, p. 352, doi. 10.3390/mi14020352
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Monolithic cyan − violet InGaN/GaN LED array.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600815
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- Article
Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium.
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- Materials (1996-1944), 2021, v. 14, n. 2, p. 354, doi. 10.3390/ma14020354
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- Article
Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.
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- Materials (1996-1944), 2019, v. 12, n. 16, p. 2583, doi. 10.3390/ma12162583
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The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-81017-w
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Role of dislocations in nitride laser diodes with different indium content.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-020-79528-z
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- Article
Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes.
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- Materials (1996-1944), 2023, v. 16, n. 19, p. 6568, doi. 10.3390/ma16196568
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- Article