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(111)‐Oriented Growth and Acceptor Doping of Transparent Conductive CuI:S Thin Films by Spin Coating and Radio Frequency‐Sputtering.
- Published in:
- Advanced Engineering Materials, 2023, v. 25, n. 11, p. 1, doi. 10.1002/adem.202201666
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- Publication type:
- Article
Record‐Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite.
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- Advanced Engineering Materials, 2019, v. 21, n. 12, p. N.PAG, doi. 10.1002/adem.201900991
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- Publication type:
- Article
Record‐Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite.
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- Advanced Engineering Materials, 2019, v. 21, n. 12, p. N.PAG, doi. 10.1002/adem.201900991
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- Publication type:
- Article
Ferrimagnetic ZnFe<sub>2</sub>O<sub>4</sub> thin films on SrTiO<sub>3</sub> single crystals with highly tunable electrical conductivity.
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- Physica Status Solidi - Rapid Research Letters, 2011, v. 5, n. 12, p. 438, doi. 10.1002/pssr.201105359
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- Article
Resistivity control of ZnO nanowires by Al doping.
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- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 3/4, p. 82, doi. 10.1002/pssr.201004015
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- Article
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells.
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- Physica Status Solidi - Rapid Research Letters, 2009, v. 3, n. 2/3, p. 70, doi. 10.1002/pssr.200802264
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- Article
Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates.
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- Angewandte Chemie International Edition, 2010, v. 49, n. 49, p. 9530, doi. 10.1002/anie.201000984
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- Article
A Practical, Self-Catalytic, Atomic Layer Deposition of Silicon Dioxide.
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- Angewandte Chemie International Edition, 2008, v. 47, n. 33, p. 6177, doi. 10.1002/anie.200800245
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- Article
Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using ZnAlO and ZnGaO Seed Layers.
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- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-1906-2
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- Article
Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition.
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- Laser Chemistry, 2010, v. 2010, p. 1, doi. 10.1155/2011/140976
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- Article
Grain and Grain Boundary Conduction Channels in Copper Iodide Thin Films.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 6, p. 1, doi. 10.1002/pssa.202200883
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- Article
Oxygen‐Induced Phase Separation in Sputtered Cu–Sn–I–O Thin Films.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 5, p. 1, doi. 10.1002/pssa.202200646
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- Article
Realization of Conductive n‐Type Doped α‐Ga<sub>2</sub>O<sub>3</sub> on m‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 3, p. 1, doi. 10.1002/pssa.202200721
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- Article
Numerical Modeling of Schottky Barrier Diode Characteristics.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 12, p. 1, doi. 10.1002/pssa.202100121
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- Article
Modeling of a Waveguide‐Based UV–VIS–IR Spectrometer Based on a Lateral (In,Ga)N Alloy Gradient (Phys. Status Solidi A 14∕2019).
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 14, p. N.PAG, doi. 10.1002/pssa.201970049
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- Article
Modeling of a Waveguide‐Based UV–VIS–IR Spectrometer Based on a Lateral (In,Ga)N Alloy Gradient.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 14, p. N.PAG, doi. 10.1002/pssa.201900170
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- Article
Electrical Properties of Vertical p‐NiO/n‐Ga<sub>2</sub>O<sub>3</sub> and p‐ZnCo<sub>2</sub>O<sub>4</sub>/n‐Ga<sub>2</sub>O<sub>3</sub> pn‐Heterodiodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 7, p. N.PAG, doi. 10.1002/pssa.201800729
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- Article
Monolithic Forward‐Looking Photodetector for Use as Ultra‐Compact Wavemeter with Wide Spectral Range.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 24, p. N.PAG, doi. 10.1002/pssa.201800651
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- Article
Properties of In<sub>2</sub>S<sub>3</sub>‐Based pin‐Heterojunctions.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 11, p. 1, doi. 10.1002/pssa.201700827
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- Article
Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin films.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700210
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- Article
Electron transport mechanism in rf-sputtered amorphous zinc oxynitride thin films.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 7, p. 1767, doi. 10.1002/pssa.201532939
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- Article
Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 12, p. 2850, doi. 10.1002/pssa.201431932
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- Article
LaNiO<sub>3</sub> films with tunable out-of-plane lattice parameter and their strain-related electrical properties.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 9, p. 1925, doi. 10.1002/pssa.201431695
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- Article
Aluminium- and gallium-doped homoepitaxial ZnO thin films: Strain-engineering and electrical performance.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 7, p. 1440, doi. 10.1002/pssa.201431929
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- Article
Karl Bädeker (1877-1914) and the discovery of transparent conductive materials.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 7, p. 1409, doi. 10.1002/pssa.201431921
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- Article
Karl Bädeker (1877-1914) and the discovery of transparent conductive materials.
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- 2015
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- Publication type:
- Other
Long-throw magnetron sputtering of amorphous Zn-Sn-O thin films at room temperature.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 7, p. 1482, doi. 10.1002/pssa.201431918
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- Article
Layer-by-layer growth of TiN by pulsed laser deposition on in-situ annealed (100) MgO substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 11, p. 2621, doi. 10.1002/pssa.201431458
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- Article
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga<sub>2</sub>O<sub>3</sub> thin films grown by pulsed laser deposition.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 1, p. 40, doi. 10.1002/pssa.201330088
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- Article
Control of the conductivity of Si-doped β- Ga<sub>2</sub> O<sub>3</sub> thin films via growth temperature and pressure.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 1, p. 34, doi. 10.1002/pssa.201330025
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- Article
Interface charging effects in ferroelectric Zn O- Ba Ti O<sub>3</sub> field-effect transistor heterostructures.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 1, p. 166, doi. 10.1002/pssa.201330171
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- Article
Cuprous iodide - a p-type transparent semiconductor: history and novel applications.
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- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 9, p. 1671, doi. 10.1002/pssa.201370056
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- Article
Cuprous iodide - a p-type transparent semiconductor: history and novel applications (Phys. Status Solidi A 9∕2013).
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- 2013
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- Publication type:
- Other
Mikroskopischer Mechanismus der spezifischen Adhäsion von Peptiden an Halbleitersubstraten.
- Published in:
- Angewandte Chemie, 2010, v. 122, n. 49, p. 9721, doi. 10.1002/ange.201000984
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- Article
Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300291
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- Publication type:
- Article
All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride.
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- Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202000883
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- Publication type:
- Article
All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing.
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- Advanced Electronic Materials, 2020, v. 6, n. 10, p. 1, doi. 10.1002/aelm.202000423
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- Article
Metal–Semiconductor Field‐Effect Transistors Based on the Amorphous Multi‐Anion Compound ZnON.
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- Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901066
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- Publication type:
- Article
Low‐Voltage Operation of Ring Oscillators Based on Room‐Temperature‐Deposited Amorphous Zinc‐Tin‐Oxide Channel MESFETs.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900548
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- Article
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures.
- Published in:
- Nature Communications, 2020, v. 11, n. 1, p. 1, doi. 10.1038/s41467-020-18914-7
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- Article
Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach.
- Published in:
- Annalen der Physik, 2018, v. 530, n. 2, p. 1, doi. 10.1002/andp.201700335
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- Article
Raman tensor elements of β-Ga<sub>2</sub>O<sub>3</sub>.
- Published in:
- Scientific Reports, 2016, p. 35964, doi. 10.1038/srep35964
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- Publication type:
- Article
Room-temperature Domain-epitaxy of Copper Iodide Thin Films for Transparent CuI/ZnO Heterojunctions with High Rectification Ratios Larger than 10<sup>9</sup>.
- Published in:
- Scientific Reports, 2016, p. 21937, doi. 10.1038/srep21937
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- Publication type:
- Article
Enhanced Magnetoelectric Coupling in BaTiO3-BiFeO3 Multilayers—An Interface Effect.
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- Materials (1996-1944), 2020, v. 13, n. 1, p. 197, doi. 10.3390/ma13010197
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- Article
Native Point Defect Measurement and Manipulation in ZnO Nanostructures.
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- Materials (1996-1944), 2019, v. 12, n. 14, p. 2242, doi. 10.3390/ma12142242
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- Article
Correlation of High Magnetoelectric Coupling with Oxygen Vacancy Superstructure in Epitaxial Multiferroic BaTiO<sub>3</sub>-BiFeO<sub>3</sub> Composite Thin Films.
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- Materials (1996-1944), 2016, v. 9, n. 1, p. 44, doi. 10.3390/ma9010044
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- Article
Damp Heat Treatment of Cu(In,Ga)Se<sub>2</sub> Solar Cells with Different Sodium Content.
- Published in:
- Materials (1996-1944), 2013, v. 6, n. 12, p. 5478, doi. 10.3390/ma6125478
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- Article
Oxid‐Halbleiter mit ultrabreiter Bandlücke: Darstellung mittels kombinatorischer gepulster Laserdeposition und Untersuchung physikalischer Eigenschaften.
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- Vakuum in Forschung und Praxis, 2020, v. 32, n. 6, p. 32, doi. 10.1002/vipr.202000747
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- Article
Redshift of large wave vector LO phonon modes in wurtzite semiconductors due to the presence of free charge carriers.
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- Journal of Raman Spectroscopy, 2015, v. 46, n. 1, p. 167, doi. 10.1002/jrs.4591
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- Article
The principal axes systems for the elastic properties of monoclinic gallia.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-73970-9
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- Publication type:
- Article