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Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100).
Published in:
Technical Physics Letters, 2003, v. 29, n. 8, p. 691, doi. 10.1134/1.1606790
By:
- Tonkikh, A.A.;
- Cirhn, G.E.;
- Dubrovskii, V.G.;
- Samsonenkoa, Yu.B.;
- Polyakova, N.K.;
- Egorova, V.A.;
- Gladyshev, A.G.;
- Kryzhanovskaya, N.V.;
- Ustinov, V.M.
Publication type:
Article
Quantum-Cascade Laser with Radiation Emission through a Textured Layer.
Published in:
Semiconductors, 2022, v. 56, n. 1, p. 1, doi. 10.1134/S106378262201002X
By:
- Babichev, A. V.;
- Kolodeznyi, E. S.;
- Gladyshev, A.G.;
- Denisov, D. V.;
- Voznyuk, G. V.;
- Mitrofanov, M. I.;
- Mikhailov, D. A.;
- Chistyakov, D. V.;
- Kuritsyn, D. I.;
- Dudelev, V. V.;
- Slipchenko, S. O.;
- Lyutetskii, A. V.;
- Evtikhiev, V. P.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Morozov, S. V.;
- Sokolovskii, G. S.;
- Pikhtin, N. A.;
- Egorov, A. Yu.
Publication type:
Article
High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 732, doi. 10.1134/1.1766381
By:
- Maksimov, M.V.;
- Shernyakov, Yu.M.;
- Kryzhanovskaya, N.V.;
- Gladyshev, A.G.;
- Musikhin, Yu.G.;
- Ledentsov, N.N.;
- Zhukov, A.E.;
- Vasil'ev, A.P.;
- Kovsh, A.R.;
- Mikhrin, S.S.;
- Semenova, E.S.;
- Maleev, N.A.;
- Nikitina, E.V.;
- Ustinov, V.M.;
- Alferov, Zh.I.
Publication type:
Article
Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.
Published in:
Semiconductors, 2003, v. 37, n. 9, p. 1104, doi. 10.1134/1.1610128
By:
- Semenova, E.S.;
- Zhukov, A.E.;
- Vasil'ev, A.P.;
- Mikhrin, S.S.;
- Kovsh, A.R.;
- Ustinov, V.M.;
- Musikhin, Yu.G.;
- Blokhin, S.A.;
- Gladyshev, A.G.;
- Ledentsov, N.N.
Publication type:
Article
Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.
Published in:
Semiconductors, 2003, v. 37, n. 9, p. 1119, doi. 10.1134/1.1610131
By:
- Zhukov, A.E.;
- Kovsh, A.R.;
- Mikhrin, S.S.;
- Semenova, E.S.;
- Maleev, N.A.;
- Vasil'ev, A.P.;
- Nikitina, E.V.;
- Kryzhanovskaya, N.V.;
- Gladyshev, A.G.;
- Shernyakov, Yu.M.;
- Musikhin, Yu.G.;
- Maksimov, M.V.;
- Ledentsov, N.N.;
- Ustinov, V.M.;
- Alferov, Zh.I.
Publication type:
Article
EXCITED STATE PHOTOLUMINESCENCE IN STEPPED InGaAs/AlGaAs QUANTUM WELLS UNDER PICOSECOND EXCITATION.
Published in:
International Journal of Nanoscience, 2003, v. 2, n. 6, p. 427, doi. 10.1142/S0219581X03001528
By:
- Shalygin, V.A.;
- Vorobjev, L.E.;
- Panevin, V.Yu.;
- Firsov, D.A.;
- Hanna, S.;
- Knieling, H.;
- Seilmeier, A.;
- Araktcheeva, E.M.;
- Kryzhanovskaya, N.V.;
- Gladyshev, A.G.;
- Zhukov, A.E.;
- Ustinov, V.M.
Publication type:
Article

Found: 6

Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100).

Quantum-Cascade Laser with Radiation Emission through a Textured Layer.

High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.

Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.

Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.

EXCITED STATE PHOTOLUMINESCENCE IN STEPPED InGaAs/AlGaAs QUANTUM WELLS UNDER PICOSECOND EXCITATION.