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43‐3: Student Paper: Enhanced External Quantum Efficiency in the Low‐Current Region Using Three Terminal GaN‐Based Blue Micro‐Light‐Emitting Diodes.
- Published in:
- SID Symposium Digest of Technical Papers, 2022, v. 53, n. 1, p. 545, doi. 10.1002/sdtp.15545
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- Article
Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay.
- Published in:
- Nature Communications, 2023, v. 14, p. 1, doi. 10.1038/s41467-023-36773-w
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- Article
Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics.
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- Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300327
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- Article
Oxygen Scavenging in HfZrO<sub>x</sub>‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201257
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- Article
Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 19, p. 3013, doi. 10.3390/electronics11193013
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- Article
Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.
- Published in:
- Scientific Reports, 2016, p. 20610, doi. 10.1038/srep20610
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- Article
Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-55159-x
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- Article
InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-49300-z
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- Article
Broadband Photodetectors: Arrayed MoS<sub>2</sub>–In<sub>0.53</sub>Ga<sub>0.47</sub>As van der Waals Heterostructure for High‐Speed and Broadband Detection from Visible to Shortwave‐Infrared Light (Small 17/2021).
- Published in:
- Small, 2021, v. 17, n. 17, p. 1, doi. 10.1002/smll.202007357
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- Article
Arrayed MoS<sub>2</sub>–In<sub>0.53</sub>Ga<sub>0.47</sub>As van der Waals Heterostructure for High‐Speed and Broadband Detection from Visible to Shortwave‐Infrared Light.
- Published in:
- Small, 2021, v. 17, n. 17, p. 1, doi. 10.1002/smll.202007357
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- Publication type:
- Article
Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si.
- Published in:
- Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03762-9
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- Article
Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED.
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- Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03669-5
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- Article
Effects of nitrogen flow rate in ohmic contacts on InAlN/GaN heterostructures.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 22, p. 1545, doi. 10.1049/el.2014.2061
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- Article