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Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates.
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- Advanced Materials Technologies, 2023, v. 8, n. 18, p. 1, doi. 10.1002/admt.202300600
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- Article
Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template.
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- Advanced Materials Technologies, 2023, v. 8, n. 15, p. 1, doi. 10.1002/admt.202300147
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- Article
Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019).
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- Advanced Materials Technologies, 2019, v. 4, n. 10, p. N.PAG, doi. 10.1002/admt.201970057
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- Article
Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications.
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- Advanced Materials Technologies, 2019, v. 4, n. 10, p. N.PAG, doi. 10.1002/admt.201900164
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- Article
A study of BGaN back-barriers for AlGaN/GaN HEMTs.
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- European Physical Journal - Applied Physics, 2012, v. 60, n. 3, p. N.PAG, doi. 10.1051/epjap/2012120265
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- Article
Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-77681-z
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Light‐Emitting Diodes: Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019).
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- Advanced Materials Interfaces, 2019, v. 6, n. 16, p. N.PAG, doi. 10.1002/admi.201900207
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- Article
Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride.
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- Advanced Materials Interfaces, 2019, v. 6, n. 16, p. N.PAG, doi. 10.1002/admi.201900207
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- Article
Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 1, p. 211, doi. 10.3390/nano11010211
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- Article