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Influence of state hybridization on low-temperature electron transport in shallow quantum wells.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 174, doi. 10.1134/S1063776107070382
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- Article
Enhancement of Electron Mobility and Photoconductivity in Quantum Well In<sub>0:52</sub>Al<sub>0:48</sub>As/In<sub>0:53</sub>Ga<sub>0:47</sub>As/In<sub>0:52</sub>A10:48As on InP Substrate.
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- Acta Physica Polonica: A, 2013, v. 123, n. 2, p. 345, doi. 10.12693/APhysPolA.123.345
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- Article
Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields.
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- Acta Physica Polonica: A, 2011, v. 119, n. 2, p. 170
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- Article
THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures.
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- Optics & Spectroscopy, 2020, v. 128, n. 7, p. 1010, doi. 10.1134/S0030400X20070097
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- Article
Study of the Surface Morphology, Electrophysical Characteristics, and Photoluminescence Spectra of GaAs Epitaxial Films on GaAs(110) Substrates.
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- Optics & Spectroscopy, 2020, v. 128, n. 7, p. 877, doi. 10.1134/S0030400X20070061
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- Article
Study of the Effects of Size Quantization in Coupled Al[sub x]Ga[sub 1 – ][sub x]As/GaAs/Al[sub x]Ga[sub 1 – ][sub x]As Quantum Wells by Means of Photoreflectance Spectroscopy.
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- Optics & Spectroscopy, 2002, v. 93, n. 6, p. 857, doi. 10.1134/1.1531708
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- Article
Effect of the spacer growth temperature on the electrophysical and structural properties of PHEMTs.
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- Technical Physics, 2007, v. 52, n. 4, p. 440, doi. 10.1134/S106378420704007X
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- Article
Study of the Structural Perfection and Distribution/Redistribution of Silicon in Epitaxial GaAs Films Grown by Molecular Beam Epitaxy on (100), (111)A, and (111)B Substrates.
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- Technical Physics, 2001, v. 46, n. 4, p. 411, doi. 10.1134/1.1365463
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- Article
Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100),(111)A, and (111)B orientations.
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- Technical Physics, 1999, v. 44, n. 7, p. 801, doi. 10.1134/1.1259351
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- Article
Exciton-exciton interaction in GaAs/AlGaAs quantum wells under intense optical excitation.
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- Doklady Physics, 2006, v. 51, n. 8, p. 403, doi. 10.1134/S1028335806080039
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- Article
Conductance Anisotropy of δ-Si Doped GaAs Layers Grown by Molecular Beam Epitaxy on (111)A GaAs Substrates and Misoriented in the [211] Direction.
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- Doklady Physics, 2002, v. 47, n. 6, p. 419, doi. 10.1134/1.1493376
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- Article
Effect of Misorientation Angle on the Photoluminescence Spectra of Si (δ)-Doped GaAs (111)A Layers Grown by Molecular Beam Epitaxy.
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- Doklady Physics, 2001, v. 46, n. 2, p. 88, doi. 10.1134/1.1355381
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- Article
X-ray Diffraction Analysis of the Structure In<sub>0.53</sub>Ga<sub>0.47</sub>As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer.
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- Crystallography Reports, 2022, v. 67, n. 3, p. 317, doi. 10.1134/S1063774522030075
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- Article
Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates.
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- Crystallography Reports, 2020, v. 65, n. 3, p. 496, doi. 10.1134/S1063774520030104
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- Article
New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate.
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- Crystallography Reports, 2019, v. 64, n. 2, p. 205, doi. 10.1134/S1063774519020111
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- Article
Electrical and structural characteristics of metamorphic In<sub>0.38</sub>Al<sub>0.62</sub>As/In<sub>0.37</sub>Ga<sub>0.63</sub>As/In<sub>0.38</sub>Al<sub>0.62</sub>As HEMT nanoheterostructures.
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- Crystallography Reports, 2013, v. 58, n. 6, p. 914, doi. 10.1134/S1063774513060114
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- Article
The electrical and structural properties of In<sub> y</sub>Ga<sub>1 − y</sub>As/In<sub> x</sub>Al<sub>1 − x</sub>As/InP quantum wells with different InAs content.
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- Crystallography Reports, 2010, v. 55, n. 1, p. 6, doi. 10.1134/S1063774510010025
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- Article
Study of the relationship between the crystal structure of nanolayers and electrical properties in Al<sub> x </sub>Ga<sub>1− x </sub>As/In<sub> y </sub>Ga<sub>1− y </sub>As pseudobinary heterostructures by double-crystal X-ray diffraction.
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- Crystallography Reports, 2008, v. 53, n. 2, p. 183, doi. 10.1134/S106377450802003X
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- Article
Structural Characterization of Interfaces in the Al<sub>x</sub>Ga<sub>1 – </sub><sub>x</sub>As/GaAs/Al<sub>x</sub>Ga<sub>1 – </sub><sub>x</sub>As Heterostructures by High-Resolution X-ray Reflectometry and Diffractometry.
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- Crystallography Reports, 2005, v. 50, n. 5, p. 739, doi. 10.1134/1.2049390
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- Article
Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 27, p. -1, doi. 10.1142/S0217979217501958
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- Article
Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths.
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- Semiconductors, 2013, v. 47, n. 9, p. 1203, doi. 10.1134/S106378261309008X
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- Article
Electron transport in an InAlAs/InGaAs/InAlAs quantum well with a δ-Si doped barrier in high electric fields.
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- Semiconductors, 2010, v. 44, n. 7, p. 898, doi. 10.1134/S1063782610070122
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- Article
Drift velocity of electrons in quantum wells in high electric fields.
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- Semiconductors, 2009, v. 43, n. 4, p. 458, doi. 10.1134/S1063782609040095
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- Article
Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides.
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- Semiconductors, 2008, v. 42, n. 9, p. 1084, doi. 10.1134/S1063782608090145
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- Article
The effect of spacer-layer growth temperature on mobility in a two-dimensional electron gas in PHEMT structures.
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- Semiconductors, 2006, v. 40, n. 12, p. 1445, doi. 10.1134/S1063782606120141
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Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type δ-doped layers.
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- Semiconductors, 2006, v. 40, n. 5, p. 558, doi. 10.1134/S1063782606050095
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- Article
Electron Magnetotransport in Coupled Quantum Wells with Double-Sided Doping.
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- Semiconductors, 2004, v. 38, n. 11, p. 1326, doi. 10.1134/1.1823069
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- Article
Electron Transport in Coupled Quantum Wells with Double-Sided Doping.
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- Semiconductors, 2003, v. 37, n. 6, p. 686, doi. 10.1134/1.1582536
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- Article
Photoluminescence Study of AlGaAs/GaAs/AlGaAs Double Quantum Wells Separated by a Thin AlAs Layer.
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- Semiconductors, 2003, v. 37, n. 5, p. 581, doi. 10.1134/1.1575365
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- Article
Electron Mobility in a AlGaAs/GaAs/AlGaAs Quantum Well.
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- Semiconductors, 2002, v. 36, n. 6, p. 674, doi. 10.1134/1.1485669
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- Article
A Study of the Electrical and Optical Properties of Si Delta-Doped GaAs Layers Grown by MBE on a (111)A GaAs Surface Misoriented toward the [211 ] Direction.
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- Semiconductors, 2001, v. 35, n. 4, p. 409, doi. 10.1134/1.1365184
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- Article
The Use of the Amphoteric Nature of Impurity Silicon Atoms for Obtaining Planar p–n Junctions on GaAs (111)A Substrates by Molecular Beam Epitaxy.
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- Semiconductors, 2001, v. 35, n. 4, p. 415, doi. 10.1134/1.1365185
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- Article
Investigation of Distribution and Redistribution of Silicon in Thin Doped Gallium-Arsenide Layers Grown by Molecular Beam Epitaxy on Substrates with (100), (111)Ga, and (111)As Orientations.
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- Semiconductors, 2000, v. 34, n. 7, p. 741, doi. 10.1134/1.1188065
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- Article
Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers.
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- Semiconductors, 1998, v. 32, n. 11, p. 1175, doi. 10.1134/1.1187586
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- Article
Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy
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- Semiconductors, 1998, v. 32, n. 9, p. 950, doi. 10.1134/1.1187521
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Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures.
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- Semiconductors, 1997, v. 31, n. 10, p. 1003, doi. 10.1134/1.1187013
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- Article
QUANTUM AND TRANSPORT SCATTERING TIMES IN AlGaAs/InGaAs NANOHETEROSTRUCTURES WITH AlAs INSERTS IN THE SPACER LAYER.
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- Lithuanian Journal of Physics, 2015, v. 55, n. 4, p. 249
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- Article
Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra.
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- Semiconductors, 2020, v. 54, n. 11, p. 1417, doi. 10.1134/S1063782620110093
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- Article
Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates.
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- Semiconductors, 2019, v. 53, n. 2, p. 246, doi. 10.1134/S1063782619020088
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- Article
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures.
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- Semiconductors, 2018, v. 52, n. 3, p. 376, doi. 10.1134/S1063782618030119
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- Article