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The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF<sub>4</sub> Plasma.
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- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 25, doi. 10.26636/jtit.2010.1.1059
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- Article
Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF<sub>4</sub> Plasma.
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- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 20, doi. 10.26636/jtit.2010.1.1058
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- Article
Charge-pumping characterization of FILOX vertical MOSFETs.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 73, doi. 10.26636/jtit.2007.3.833
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- Article
Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 3, doi. 10.26636/jtit.2007.3.819
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- Article
Characterization of SOI MOSFETs by means of charge-pumping.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 67, doi. 10.26636/jtit.2007.3.832
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- Article
Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 61, doi. 10.26636/jtit.2007.3.831
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- Article
The influence of annealing (900°C) of ultra-thin PECVD silicon oxynitride layers.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 16, doi. 10.26636/jtit.2007.3.821
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- Article