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Second-Order Nanoscale Thermal Effects in Memristive Structures Based on Poly-p-Xylylene.
Published in:
JETP Letters, 2020, v. 112, n. 6, p. 357, doi. 10.1134/S0021364020180071
By:
- Matsukatova, A. N.;
- Emelyanov, A. V.;
- Minnekhanov, A. A.;
- Demin, V. A.;
- Rylkov, V. V.;
- Forsh, P. A.;
- Kashkarov, P. K.
Publication type:
Article
Second-Order Nanoscale Thermal Effects in Memristive Structures Based on Poly-p-Xylylene.
Published in:
JETP Letters, 2020, v. 112, n. 6, p. 357, doi. 10.1134/S0021364020180071
By:
- Matsukatova, A. N.;
- Emelyanov, A. V.;
- Minnekhanov, A. A.;
- Demin, V. A.;
- Rylkov, V. V.;
- Forsh, P. A.;
- Kashkarov, P. K.
Publication type:
Article
Charge carrier transport in indium oxide nanocrystals.
Published in:
Journal of Experimental & Theoretical Physics, 2010, v. 111, n. 4, p. 653, doi. 10.1134/S106377611010016X
By:
- Forsh, E.;
- Marikutsa, A.;
- Martyshov, M.;
- Forsh, P.;
- Rumyantseva, M.;
- Gas'kov, A.;
- Kashkarov, P.
Publication type:
Article
Mobility of charge carriers in porous silicon layers.
Published in:
Journal of Experimental & Theoretical Physics, 2008, v. 107, n. 6, p. 1022, doi. 10.1134/S106377610812011X
By:
- Forsh, P. A.;
- Martyshov, M. N.;
- Latysheva, A. P.;
- Vorontsov, A. S.;
- Timoshenko, V. Yu.;
- Kashkarov, P. K.
Publication type:
Article
The Effect of Illumination on the Electric and Photoelectric Properties of μc-Si : H Films Weakly Doped with Boron.
Published in:
Technical Physics Letters, 2000, v. 26, n. 5, p. 410, doi. 10.1134/1.1262861
By:
- Kazanskiı, A. G.;
- Kozlov, S. N.;
- Mell, H.;
- Forsh, P. A.
Publication type:
Article
Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films.
Published in:
Journal of Nano- & Electronic Physics, 2016, v. 8, n. 3, p. 1, doi. 10.21272/jnep.8(3).03038
By:
- Rybalko, P. D.;
- Khenkin, M. V.;
- Forsh, P. A.;
- Drevinskas, R.;
- Matsukatova, A. N.;
- Kazansky, P.;
- Kazanskii, A. G.
Publication type:
Article
Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1638, doi. 10.1134/S1063782618120114
By:
- Ilin, A. S.;
- Matsukatova, A. N.;
- Forsh, P. A.;
- Vygranenko, Yu.
Publication type:
Article
Study of the correlation properties of the surface structure of nc-Si/ a-Si:H films with different fractions of the crystalline phase.
Published in:
Semiconductors, 2016, v. 50, n. 5, p. 590, doi. 10.1134/S1063782616050031
By:
- Alpatov, A.;
- Vikhrov, S.;
- Kazanskii, A.;
- Lyaskovskii, V.;
- Rybin, N.;
- Rybina, N.;
- Forsh, P.
Publication type:
Article
Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide.
Published in:
Semiconductors, 2016, v. 50, n. 5, p. 607, doi. 10.1134/S1063782616050110
By:
- Il'in, A.;
- Fantina, N.;
- Martyshov, M.;
- Forsh, P.;
- Chizhov, A.;
- Rumyantseva, M.;
- Gaskov, A.;
- Kashkarov, P.
Publication type:
Article
Specific features of the optical and photoelectric properties of nanocrystalline indium oxide.
Published in:
Semiconductors, 2015, v. 49, n. 9, p. 1149, doi. 10.1134/S1063782615090109
By:
- Forsh, E.;
- Forsh, P.;
- Kashkarov, P.
Publication type:
Article
Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1271, doi. 10.1134/S1063782613090108
By:
- Khenkin, M. V.;
- Emelyanov, A. V.;
- Kazanskii, A. G.;
- Forsh, P. A.;
- Kashkarov, P. K.;
- Terukov, E. I.;
- Orekhov, D. L.;
- Roca i Cabarrocas, P.
Publication type:
Article
Conductivity of nanocrystalline ZnO(Ga).
Published in:
Semiconductors, 2013, v. 47, n. 5, p. 650, doi. 10.1134/S1063782613050242
By:
- Vorobyeva, N.;
- Rumyantseva, M.;
- Forsh, P.;
- Gaskov, A.
Publication type:
Article
Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties.
Published in:
Semiconductors, 2012, v. 46, n. 6, p. 749, doi. 10.1134/S1063782612060097
By:
- Emelyanov, A.;
- Kazanskii, A.;
- Kashkarov, P.;
- Konkov, O.;
- Terukov, E.;
- Forsh, P.;
- Khenkin, M.;
- Kukin, A.;
- Beresna, M.;
- Kazansky, P.
Publication type:
Article
Specific features of photoelectric and optical properties of amorphous hydrogenated silicon films produced by plasmochemical deposition from monosilane-hydrogen mixture.
Published in:
Semiconductors, 2011, v. 45, n. 4, p. 510, doi. 10.1134/S1063782611040117
By:
- Kazanskii, A.;
- Terukov, E.;
- Forsh, P.;
- Khenkin, M.
Publication type:
Article
Vibronic properties of organic semiconductors based on phthalocyanine complexes with asymmetrically distributed electron density.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 766, doi. 10.1134/S1063782610060138
By:
- Belogorokhov, I. A.;
- Martishov, M. N.;
- Mamichev, D. A.;
- Dronov, M. A.;
- Pushkarev, V. E.;
- Ryabchikov, Yu. V.;
- Forsh, P. A.;
- Tomilova, L. G.;
- Khokhlov, D. R.
Publication type:
Article
Photoconductivity of two-phase hydrogenated silicon films.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 494, doi. 10.1134/S1063782610040159
By:
- Kazanskii, A. G.;
- Terukov, E. I.;
- Forsh, P. A.;
- Kleider, J. P.
Publication type:
Article
Effect of thermal oxidation on charge carrier transport in nanostructured silicon.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 350, doi. 10.1134/S1063782610030139
By:
- Agafonova, E. A.;
- Martyshov, M. N.;
- Forsh, P. A.;
- Timoshenko, V. Yu.;
- Kashkarov, P. K.
Publication type:
Article
Features of the structure and defect states in hydrogenated polymorphous silicon films.
Published in:
JETP Letters, 2013, v. 97, n. 8, p. 466, doi. 10.1134/S0021364013080079
By:
- Emelyanov, A.;
- Konstantinova, E.;
- Forsh, P.;
- Kazanskii, A.;
- Khenkin, M.;
- Petrova, N.;
- Terukov, E.;
- Kirilenko, D.;
- Bert, N.;
- Konnikov, S.;
- Kashkarov, P.
Publication type:
Article
Vibronic and electric properties of semiconductor structures based on butyl-substituted mono-and triphthalocyanine containing erbium ions.
Published in:
JETP Letters, 2007, v. 85, n. 12, p. 655, doi. 10.1134/S0021364007120144
By:
- Belogorokhov, I.;
- Martyshov, M.;
- Tikhonov, E.;
- Breusova, M.;
- Pushkarev, V.;
- Forsh, P.;
- Zoteev, A.;
- Tomilova, L.;
- Khokhlov, D.
Publication type:
Article
Intrinsic luminescence of Tb in metal-polymer complexes of polyamide acids.
Published in:
Semiconductors, 2008, v. 42, n. 5, p. 604, doi. 10.1134/S1063782608050205
By:
- Lebedev, É.;
- Goikhman, M.;
- Zhigunov, D.;
- Podeshvo, I.;
- Nikitin, S.;
- Forsh, P.;
- Kudryavtsev, V.;
- Yakimanskiĭ, A.
Publication type:
Article
Study of the conductance of ultrathin tin diphthalocyanine films.
Published in:
Semiconductors, 2008, v. 42, n. 2, p. 199, doi. 10.1134/S1063782608020140
By:
- Levshin, N.;
- Pronin, N.;
- Forsh, P.;
- Yudin, S.
Publication type:
Article
Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix.
Published in:
Semiconductors, 2006, v. 40, n. 9, p. 1052, doi. 10.1134/S1063782606090119
By:
- Ryabchikov, Yu. V.;
- Forsh, P. A.;
- Lebedev, E. A.;
- Timoshenko, V. Yu.;
- Kashkarov, P. K.;
- Kamenev, B. V.;
- Tsybeskov, L.
Publication type:
Article
Alternating current conductivity of anisotropically nanostructured silicon.
Published in:
Semiconductors, 2006, v. 40, n. 4, p. 471, doi. 10.1134/S106378260604018X
By:
- Forsh, P.;
- Martyshov, M.;
- Timoshenko, V.;
- Kashkarov, P.
Publication type:
Article
Specific Features of Electrical Transport in Anisotropically Nanostructured Silicon.
Published in:
Semiconductors, 2004, v. 38, n. 5, p. 603, doi. 10.1134/1.1755900
By:
- Forsh, P. A.;
- Osminkina, L. A.;
- Timoshenko, V. Yu;
- Kashkarov, P. K.
Publication type:
Article
Photoinduced Conductivity Change in Erbium-Doped Amorphous Hydrogenated Silicon Films.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 766, doi. 10.1134/1.1592847
By:
- Kazanskii, A. G.;
- Mell, H.;
- Terukov, E. I.;
- Forsh, P. A.
Publication type:
Article
Effect of Thermal Annealing on Optical and Photoelectric Properties of Microcrystalline Hydrogenated Silicon Films.
Published in:
Semiconductors, 2003, v. 37, n. 2, p. 224, doi. 10.1134/1.1548670
By:
- Kazanskiı, A. G.;
- Mell, H.;
- Forsh, P. A.
Publication type:
Article
Effect of Boron Dopant on the Photoconductivity of Microcrystalline Hydrogenated Silicon Films.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 38, doi. 10.1134/1.1434510
By:
- Kazanskiı, A. G.;
- Mell, H.;
- Terukov, E. I.;
- Forsh, P. A.
Publication type:
Article
Effect of Temperature on Photoconductivity and Its Decay in Microcrystalline Silicon.
Published in:
Semiconductors, 2001, v. 35, n. 8, p. 953, doi. 10.1134/1.1393034
By:
- Kazanskiı, A. G.;
- Mell, H.;
- Terukov, E. I.;
- Forsh, P. A.
Publication type:
Article
Absorption and Photoconductivity of Boron-Compensated μc-Si:H.
Published in:
Semiconductors, 2000, v. 34, n. 3, p. 367, doi. 10.1134/1.1187988
By:
- Kazanskiı, A. G.;
- Mell, H.;
- Terukov, E. I.;
- Forsh, P. A.
Publication type:
Article
Studying the current-voltage characteristics of liquid-crystal langmuir films in the region of the ferroelectric phase transition.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2013, v. 7, n. 4, p. 734, doi. 10.1134/S1027451013040332
By:
- Levshin, N.;
- Forsh, P.;
- Khlybov, S.;
- Yudin, S.
Publication type:
Article
A Hybrid Mid-IR Photodetector Based on Semiconductor Quantum Wells.
Published in:
Technical Physics Letters, 2021, v. 47, n. 5, p. 388, doi. 10.1134/S1063785021040210
By:
- Krivobok, V. S.;
- Kondorskiy, A. D.;
- Pashkeev, D. A.;
- Ekimov, E. A.;
- Shabrin, A. D.;
- Litvinov, D. A.;
- Grigoreva, L. N.;
- Kolosov, S. A.;
- Chernopitssky, M. A.;
- Klekovkin, A. V.;
- Forsh, P. A.
Publication type:
Article
Memristors Based on Poly(p-xylylene) with Embedded Silver Nanoparticles.
Published in:
Technical Physics Letters, 2020, v. 46, n. 1, p. 73, doi. 10.1134/S1063785020010277
By:
- Matsukatova, A. N.;
- Emelyanov, A. V.;
- Minnekhanov, A. A.;
- Sakharutov, D. A.;
- Vdovichenko, A. Yu.;
- Kamyshinskii, R. A.;
- Demin, V. A.;
- Rylkov, V. V.;
- Forsh, P. A.;
- Chvalun, S. N.;
- Kashkarov, P. K.
Publication type:
Article
Poly-para-xylylene-Based Memristors on Flexible Substrates.
Published in:
Technical Physics Letters, 2019, v. 45, n. 11, p. 1103, doi. 10.1134/S1063785019110130
By:
- Shvetsov, B. S.;
- Matsukatova, A. N.;
- Minnekhanov, A. A.;
- Nesmelov, A. A.;
- Goncharov, B. V.;
- Lapkin, D. A.;
- Martyshov, M. N.;
- Forsh, P. A.;
- Rylkov, V. V.;
- Demin, V. A.;
- Emelyanov, A. V.
Publication type:
Article
Luminescence of solar cells with a-Si:H/c-Si heterojunctions.
Published in:
Technical Physics Letters, 2017, v. 43, n. 5, p. 496, doi. 10.1134/S1063785017050261
By:
- Zhigunov, D.;
- Il'in, A.;
- Forsh, P.;
- Bobyl', A.;
- Verbitskii, V.;
- Terukov, E.;
- Kashkarov, P.
Publication type:
Article
Voltage effect on the sensitivity of nanocrystalline indium oxide to nitrogen dioxide under ultraviolet irradiation.
Published in:
Technical Physics Letters, 2015, v. 41, n. 3, p. 252, doi. 10.1134/S1063785015030074
By:
- Ilyin, A.;
- Fantina, N.;
- Martyshov, M.;
- Forsh, P.;
- Vorontsov, A.;
- Rumyantseva, M.;
- Gas'kov, A.;
- Kashkarov, P.
Publication type:
Article
Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization.
Published in:
Technical Physics Letters, 2014, v. 40, n. 2, p. 141, doi. 10.1134/S1063785014020217
By:
- Emelyanov, A.;
- Kazanskii, A.;
- Kashkarov, P.;
- Konkov, O.;
- Kutuzov, N.;
- Lyaskovskii, V.;
- Forsh, P.;
- Khenkin, M.
Publication type:
Article

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