Found: 19
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Effect of High-Temperature Exposure on Low-Carbon Steel Welded Joint Metal Fracture Toughness.
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- Metallurgist, 2023, v. 67, n. 7/8, p. 938, doi. 10.1007/s11015-023-01583-4
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- Article
Laser-Stimulated Phase Transformations in Thin Layers of SiO<sub>x</sub> and CN<sub>x</sub> -Ni.
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- Materials Science, 2018, v. 54, n. 2, p. 223, doi. 10.1007/s11003-018-0177-0
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- Article
Phase transition driven by the coupling constant in QED<sub>3</sub> in the presence of the ultraviolet cutoff.
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- Russian Physics Journal, 2009, v. 52, n. 1, p. 110, doi. 10.1007/s11182-009-9189-4
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- Article
Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 396, doi. 10.15407/spqeo20.04.396
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- Article
Preparation and study of porous Si surfaces obtained using the electrochemical method.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 385, doi. 10.15407/spqeo20.04.385
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- Article
Nanostructuring the SiO<sub>x</sub> layers by using laser-induced self-organization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 179, doi. 10.15407/spqeo20.02.179
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- Article
Nanostructuring the SiO<sub>x</sub> layers by using laser-induced self-organization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 179, doi. 10.15407/spqeo20.02.179
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- Article
Transformation of SiO<sub>x</sub> films into nanocomposite SiO<sub>2</sub>(Si) films under thermal and laser annealing.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 295
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- Article
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 3, p. 80, doi. 10.15407/spqeo10.03.080
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- Article
Effect of laser radiation on catalytic properties of silicon electrodes covered with a transition metal film and providing water decomposition.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 3, p. 6, doi. 10.15407/spqeo10.03.006
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- Article
The influence of Cr concentration on time resolution of GaAs detectors.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 2, p. 92, doi. 10.15407/spqeo9.02.092
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- Article
Photoluminescence and Optical Absorption of Pure Nanocrystalline TiO<sub>2</sub> Anatase and Rutile at Room Temperature.
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- Journal of Nano- & Electronic Physics, 2013, v. 5, n. 3, p. 03047-1
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- Article
CURRENT DISTRIBUTION OF GOLDEN POTATO CYST NEMATODE, GLOBODERA ROSTOCHIENSIS (TYLENCHIDA, HETERODERIDAE), IN UKRAINE.
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- Zoodiversity, 2021, v. 55, n. 2, p. 167, doi. 10.15407/zoo2021.02.167
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- Article
Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon.
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- Journal of Nanomaterials, 2018, p. 1, doi. 10.1155/2018/1243685
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- Article
Photoluminescence spectra of nanocrystalline ZnO films obtained by magnetron deposition technique.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 8, p. 1, doi. 10.1007/s10854-024-12349-2
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- Article
Features of the current-voltage characteristics of long semiconductor structures under ultrahigh-level double-injection conditions.
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- Semiconductors, 1998, v. 32, n. 12, p. 1318, doi. 10.1134/1.1187621
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- Article
Relaxation spectra of photoluminescence from porous silicon obtained by chemical etching of laser-modified silicon.
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- Semiconductors, 1997, v. 31, n. 1, p. 4, doi. 10.1134/1.1187326
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- Article
Forensic Examination as a Mediation Tool: Genesis and Prospects for Development in the Context of Martial Law and Post-War Revival of Ukraine.
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- Studia Iuridica Lublinensia, 2023, v. 32, n. 4, p. 11, doi. 10.17951/sil.2023.32.4.11-32
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- Article
Suppression of hot carriers by nanoporous silicon for improved operation of a solar cell.
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- Ukrainian Journal of Physical Optics, 2020, v. 21, n. 4, p. 207, doi. 10.3116/16091833/21/4/207/2020
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- Article